Allicdata Part #: | 5082-3039-ND |
Manufacturer Part#: |
5082-3039 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | DIODE PIN GEN PURP SW 150V AXIAL |
More Detail: | RF Diode PIN - Single 150V 100mA 250mW |
DataSheet: | 5082-3039 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Diode Type: | PIN - Single |
Voltage - Peak Reverse (Max): | 150V |
Current - Max: | 100mA |
Capacitance @ Vr, F: | 0.25pF @ 50V, 1MHz |
Resistance @ If, F: | 1.25 Ohm @ 100mA, 100MHz |
Power Dissipation (Max): | 250mW |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | -- |
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Introduction to 5082-3039
The 5082-3039 is a diode-connectedNpn Silicon Unit. It is part of the 5082-3000 series of RF diodes, which were designed for high-performance UHF applications. As such, the 5082-3039 can be used for a variety of purposes, such as FM radio and television transmitters and receivers, cellular phones, and other wireless communication devices. Below we will look at the application field and working principle of the 5082-3039.
Application Field
The 5082-3039 is most often used in RF applications. It is ideal for use in FM radio or television transmitters or receivers, as it can operate in the 400MHz to 2100MHz frequency range. Additionally, the 5082-3039 is well-suited to cellular phone and wireless communication applications, as it can handle greater power levels and offers excellent stability under varying loads. These features, combined with its small size, make the 5082-3039 a popular choice for RF applications.
Working Principle
The 5082-3039 is a diode-connected Npn Silicon Unit. It is an N-channel semiconductor diode that exhibits a Schottky-effect. The Schottky-effect allows the diode to conduct current and stop current flow quickly, making the 5082-3039 ideal for switching and rectifying applications. The 5082-3039 also exhibits good forward-bias characteristics, which give it a low capacitance and a good high-frequency response.
Additionally, the 5082-3039 is a low capacitance diode and has an extremely low reverse leakage. This means that it is highly efficient in terms of power consumption and will not suffer from thermal runaway or excessive thermal distortion. This is especially important for applications in which the diode is switching at high powers, such as FM radio transmitters.
Conclusion
In conclusion, the 5082-3039 is an ideal choice for RF applications that require a diode with a wide frequency range, low capacitance, and high power handling capability. Its unique Schottky-effect allows it to quickly and efficiently switch and rectify signals, while its low-leakage ensures minimal power consumption. The 5082-3039 is a great choice for any RF application that needs high performance and stability.
The specific data is subject to PDF, and the above content is for reference
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