50MT060WH Allicdata Electronics
Allicdata Part #:

50MT060WH-ND

Manufacturer Part#:

50MT060WH

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: IGBT WARP 600V 114A MTP
More Detail: IGBT Module PT Half Bridge 600V 114A 658W Chassis ...
DataSheet: 50MT060WH datasheet50MT060WH Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: PT
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 114A
Power - Max: 658W
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
Current - Collector Cutoff (Max): 400µA
Input Capacitance (Cies) @ Vce: 7.1nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 12-MTP Module
Supplier Device Package: 12-MTP
Description

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Transistors

IGBTs

Modules

The 50MT060WH is an insulated gate bipolar transistors module (IGBT) product developed and produced by Infineon Technologies. This IGBT device is equipped for low-power to medium-power motor drives and motion control applications. A detailed description of the 50MT060WH IGBT application field, its operation principle and internal structure are discussed below.

Application Field

The 50MT060WH IGBT device is suitable for applications such as variable frequency drives, servo drives, automotive, consumer, household and white goods, and variable speed motor control. This IGBT can be used in both single-ended topologies as well as push-pull topologies. Its wide range of integration and full protection features make it an ideal solution for a variety of electronic engineering applications.

Working Principle

The working principle of the 50MT060WH IGBT device is based on two major concepts. One is the use of controlled reverse-polarity voltage to switch the IGBT on and off, and the second is the use of a control circuit to regulate the voltage and maintain the desired level of output reliability. The 50MT060WH IGBT uses an insulated-gate bipolar transistor (IGBT) structure to achieve high-speed switching, efficient conduction, low voltage drop and full temperature compensation.

An insulated gate terminal is used to inject minority carriers into the n+ and p+ regions of the device. By controlling the gate voltage, the desired current path is established between the drain and source. When the gate voltage is increased, the minority carriers are injected into the n+ and p+ regions causing the channel to become conductive and the device to be in a "on" state. When the voltage is decreased, the channel is blocked and the device is in the "off" state.

Internal Structure

The 50MT060WH IGBT is composed of a vertically stacked two-terminal IGBT structure. The integrated logic required for the control of the IGBT is mounted onto the IGBT module and placed in an inverted position to reduce its size and height. The outer module is composed of a single homogenous plastic, which is designed to withstand high temperature and is electrically insulated to provide high insulation against accidental shorts.

The inner module consists of a base element and an emitter element. The base element comprises of n-type silicon and heavily doped silicon using diffusion and etching processes, while the emitter element is composed of p-type silicon and lightly doped silicon using diffusion and etching processes. The emitter region of the IGBT is connected to the external pins via a metallic leadframe employed for dissipating heat and providing physical stability.

The 50MT060WH IGBT device also contains an external internal protection circuit that ensures the device stays protected against accidental shorts or over-currents. This protection circuit is composed of a short-circuit protection component, a temperature protection component, an over-voltage protection component, and a current limitation component.

The specific data is subject to PDF, and the above content is for reference

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