530AB800M000DG Allicdata Electronics
Allicdata Part #:

530AB800M000DG-ND

Manufacturer Part#:

530AB800M000DG

Price: $ 16.07
Product Category:

Crystals, Oscillators, Resonators

Manufacturer: Silicon Labs
Short Description: SINGLE FREQUENCY XO, OE PIN 2 (O
More Detail: 800MHz XO (Standard) LVPECL Oscillator 3.3V Enable...
DataSheet: 530AB800M000DG datasheet530AB800M000DG Datasheet/PDF
Quantity: 1000
50 +: $ 14.45960
Stock 1000Can Ship Immediately
$ 16.07
Specifications
Frequency Stability: ±20ppm
Current - Supply (Disable) (Max): 75mA
Height - Seated (Max): 0.071" (1.80mm)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Ratings: --
Current - Supply (Max): 121mA
Operating Temperature: -40°C ~ 85°C
Absolute Pull Range (APR): --
Series: Si530
Voltage - Supply: 3.3V
Output: LVPECL
Function: Enable/Disable
Frequency: 800MHz
Type: XO (Standard)
Base Resonator: Crystal
Part Status: Active
Packaging: Strip
Description

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Oscillators

An oscillator is a device or circuit that produces a periodic, oscillating electronic signal which is used to generate repetitive waveforms. It is commonly used in various applications such as communication, computing, signal processing. The most common type of oscillator is the LC oscillator, which uses an inductor and capacitor in a feedback loop to produce a repeating waveform. There are also other types of oscillators, such as the 530AB800M000DG, which uses a dual-gate MOSFET transistor as a feedback device.

530AB800M000DG Application Field

The 530AB800M000DG is a dual-gate MOSFET oscillator that operates at up to 800MHz, with frequencies ranging from 53KHz to 800MHz. It is specially designed for application in ultra-high frequency band and can be used for analog, radio, microwave and C-band applications. This oscillator has excellent phase noise and is suitable for use in applications such as radar receiver, broadband communications, and navigation.

530AB800M000DG Working Principle

The 530AB800M000DG is based on the cascade connection of dual-gate MOSFET transistors, with the primary transistor acting as a resonant device and the secondary transistor as a buffer. The circuit consists of two transistors: the primary device is used to create an oscillating voltage across the circuit, and the secondary device is used to amplify the signal. The signal produced is in the form of a sine wave. The signal is then fed to the output ports of the oscillator, and transmitted to the desired equipment.

The 530AB800M000DG oscillator is able to oscillate over a wide frequency range due to the dual-gate MOSFET transistors being able to respond to small changes in voltage. This is the main advantage of the oscillator, as it allows for high-frequency operation over large bandwidths. The oscillator also features low power consumption and low output impedance. Additionally, the oscillator has low phase noise, making it good for applications which require low distortion.

Conclusion

The 530AB800M000DG oscillator is a high-frequency dual-gate MOSFET device that operates up to 800MHz. It is suitable for use in applications such as radar receiver, broadband communications, and navigation, due to its low phase noise and low power consumption. In addition, this oscillator has excellent frequency stability because of its wide frequency range and dual-gate MOSFET configuration.

The specific data is subject to PDF, and the above content is for reference

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