55GN01CA-TB-E

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	10V
Frequency - Transition:	4.5GHz
Noise Figure (dB Typ @ f):	1.9dB @ 1GHz
Gain:	9.5dB
Power - Max:	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 5V
Current - Collector (Ic) (Max):	70mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	3-CP

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Introduction

The 55GN01CA-TB-E is a high-frequency (HF) bipolar junction transistor (BJT). The BJT is a three-terminal device that allows an electric current to flow through it and controls the base current of the transistor. The device is composed of two layers of semiconductor material is sandwiched between the emitter and collector, and the resulting junction is responsible for the current flowing through the transistor.

Application Fields

BJTs are widely used in wide range of product applications including communications, medical, commercial aircraft, defense, computers, and more. The 55GN01CA-TB-E is a transistor device specially designed for high-frequency applications and is capable of providing a very wide bandwidth, high gain, and low power dissipation.The 55GN01CA-TB-E device can be used in many applications that require high frequency operation, such as HF radio transmitters, RF amplifiers, and oscillators. The device is also an ideal choice for power amplifiers, mixers, and other circuit block applications requiring an efficient power amplifier design.

Design Considerations

The 55GN01CA-TB-E device is constructed using a NPN BJT, which consists of two layers of semiconductor material sandwiched between the emitter and collector. The base of the device is formed by a region of higher doping concentration (N-type) and the collector and emitter are formed by regions of lower doping concentration (P-type). The base region of the device forms the majority of the current flowing through the device and is responsible for controlling the emitter-base junction current of the device.When designing with the 55GN01CA-TB-E device, the designer must consider the device’s high frequency characteristics in order to achieve the desired performance. In addition, the designer must also consider the device’s thermal characteristics and operating temperature range in order to minimize the risk of thermal runaway.

Working Principle

The 55GN01CA-TB-E device is a three-terminal device that utilizes the bipolar junction to allow current flow through it. When voltage is applied to the emitter and collector terminals, a base current flows through the base region of the device, which controls the amount of current flowing between the emitter and collector. The current flowing through the device is controlled by varying the voltage applied to the base terminal.The base current of the device can be divided into two components, the DC bias current and the AC signal current. The DC bias current is determined by the voltage drop across the base-collector junction, while the AC signal current is determined by the frequency and amplitude of the input AC waveform. When the input AC waveform has a frequency that is higher than the transistor’s frequency response range, the transistor will operate in the linear region, where the AC signal current is controlled by the input voltage.When the input AC waveform has a frequency that is lower than the transistor’s frequency response range, the transistor will operate in the saturation region, where the AC signal current is controlled by the input current. The 55GN01CA-TB-E device is capable of operating in the frequency range up to 500MHz, allowing it to be used in a variety of high-frequency applications.

Conclusion

The 55GN01CA-TB-E device is a high-frequency BJT that can be used in a variety of applications where a wide bandwidth, high-gain, and low-power dissipation are desired. The device is constructed using two layers of semiconductor material, and utilizes the bipolar junction to control the current between the emitter and collector. The device is designed for operation in the frequency range up to 500MHz, making it ideal for high-frequency applications such as HF radio transmitters, RF amplifiers, oscillators, power amplifiers, and mixers.

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