55GN01MA-TL-E

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The 55GN01MA-TL-E is a silicon NPN bipolar transistor intended for use in RF and microwave applications. It is mainly used for amplifier, oscillator and mixer circuits, where high gain and power up to 3 GHz are needed. The 55GN01MA-TL-E is designed to operate from a single DC supply between 30 V and 0 V and can handle up to 13 V at the collector and up to 39 V at the emitter.

The 55GN01MA-TL-E offers a maximum gain of close to 10 dB at 1 GHz, typical peaking around 14 dB, and is a useful selection when integrated resistors networks and power matching is desired. In addition, the 55GN01MA-TL-E features a minimum DC current gain of 35 dB, which is higher than most other transistors of this type, requiring less bias current. The transistor also has an output power of up to 1.2 W and a low thermal resistance of 2.3 K/W.

The 55GN01MA-TL-E is most suitable for radio and television applications where good linearity and low noise characteristics are necessary. It can also be used in high frequency VCO (voltage-controlled oscillators), power amplifiers and oscillator circuits. The market for the 55GN01MA-TL-E covers the cellular market, military and aerospace applications, automotive, medical, and instrumentation.

The working principle behind the 55GN01MA-TL-E is as follows: it is a three terminal device that is made of N-type and P-type semiconductor materials. In operation, an electrical signal applied to the Base terminal drives current through the transistor from its Collector to its Emitter, resulting in a gain of current from the collector to the emitter. The electrons flow from the collector to the emitter through the base. It is this "current gain" that makes the transistor a useful component in amplifier, oscillator and mixer circuits.

The output impedance of the 55GN01MA-TL-E is lower than that of comparable transistors, making it an ideal choice for circuits in need of increased power and gain. The device also features an improved level of linearity and noise characteristics, while its high power capability makes it a popular choice in radio and television circuits. The low thermal resistance and large voltage supply range offer excellent reliability and long life in the most demanding applications.

The 55GN01MA-TL-E is a reliable and robust transistor designed for use in high performance RF and microwave applications. With its high power and gain capabilities, low noise levels and thermal resistance, it is a popular choice for audio, video and microwave applications. It is also a cost-effective choice for systems integrators who demand reliable performance with a minimum of time and effort for design, development and testing.

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