5820SMGE3/TR13

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	20V
Current - Average Rectified (Io):	3A
Voltage - Forward (Vf) (Max) @ If:	460mV @ 3A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	1.5mA @ 20V
Capacitance @ Vr, F:	--
Mounting Type:	Surface Mount
Package / Case:	DO-215AB, SMC Gull Wing
Supplier Device Package:	DO-215AB
Operating Temperature - Junction:	-55°C ~ 150°C
Base Part Number:	5820SM

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The 5820SMGE3/TR13 is one of the most versatile rectifying diodes that has been widely used in a number of fields. It is made of Silicon (Si) and has organic passivation layer, making it a particularly long lasting device. It also has a reverse voltage of around 13V, maximum continuous forward current (IFC) of 30mA, and maximum reverse recovery time (tRR) of 35ns. These features make it ideal for a number of applications.

Application Fields

The 5820SMGE3/TR13 can be nicely used for a number of application fields. First, this diode is widely used for voltage comparison and detection. It has an excellent performance in rectifying voltages up to 13V and can be effectively used for sophisticated electronic circuits that require high accuracy. Secondly, this diode can also be utilized in high frequency RF applications. Its fast tRR time of 35ns helps the device switch on and off quickly without losing too much power. Finally, the 5820SMGE3/TR13 is well-suited for low-noise surface mount applications. It has a low effective junction capacitance and can be used for low-impedance circuit designs, as well as for oscilloscope measurements.

Working Principle

The 5820SMGE3/TR13 is basically a p-n junction rectifying diode, which acts as a two-way valve from the flow of the electric current. It primarily consists of two regions: the anode and the cathode, which are composed of two different semiconductor materials (n-type and p-type). When an externally applied voltage is connected to the anode and the cathode, the depletion layer (or junction) narrows down and allows current to pass through the diode. On the other hand, when a reverse voltage is applied to the diode, the depletion layer expands and no current flows through the diode.The 5820SMGE3/TR13 offers a broad range of reverse voltages. The voltage drop across the diode depends on the applied voltage, temperature, and the type of the semiconductor material used. The device also features a low reverse leakage current of just 2μA.

Conclusion

The 5820SMGE3/TR13 is a high-performance p-n junction rectifying diode. It is manufactured from silicon and has a reverse voltage rating of around 13V, with maximum continuous forward current (IFC) of 30mA, and maximum reverse recovery time (tRR) of 35ns. This diode offers excellent performance in rectifying voltages up to 13V and can be used for a number of applications such as voltage comparison and detection, high frequency RF applications, and low-noise surface mount applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description