5KASMC16AHM3/57

TVS (transient voltage suppressor) diodes are components which protect other semiconductor components such as MOSFETs (metal-oxide semiconductor field-effect transistors) and ICs (integrated circuits) from high transient voltages and over-currents which may arise in an electrical circuit due to electrostatic discharge (ESD), lightning strike, or other transient events. The 5KASMC16AHM3/57 is a TVS diode specifically designed for ESD protection up to 25 kV and for over-current protection up to 16 A.

Application field

5KASMC16AHM3/57 is used in applications where components need to be protected from high transient voltages and over-currents. It is specifically designed for device-level ESD protection up to 25 kV. It is most commonly used to protect integrated circuits, field effect transistors, and other semiconductor components.

The 5KASMC16AHM3/57 is designed for applications where a high level of ESD and surge protection is required, such as mobile phones, consumer electronics, industrial systems, and automotive systems.

Working Principle

A TVS diode has two terminals: an anode and a cathode. When applied with a transient voltage, a current begins to flow through the diode, causing the anode voltage to rise faster than the cathode voltage. This transient voltage is quickly absorbed by the diode, and the circuit is then protected. The absorbed voltage does not damage the diode, as it is able to dissipate the energy by an avalanche breakdown process.

The 5KASMC16AHM3/57 TVS diode is specifically designed to protect against ESD and inrush currents. It has a high clamping voltage, which means that it can absorb high transient voltages without damaging the protected components. The diode also has a low holding current and a fast response time, which ensures that it can protect against high-frequency transients.

Conclusion

The 5KASMC16AHM3/57 is a TVS diode designed for a wide range of applications where high ESD, over-current, and surge protection is required. It is specifically designed to protect integrated circuits, field effect transistors, and other semiconductor components. The diode is capable of absorbing high transient voltages without damaging the protected components, and has a fast response time and low holding current.