5KP10CA-HRA

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TVS Diodes are an essential part of many electronic devices, and the 5KP10CA-HRA is no exception. The device is composed of two parts: the avalanche diode and the reverse-biased avalanche (RBA) diode. The avalanche diode is used as a protection device for transient events such as ElectroStatic Discharge (ESD) and lightning strikes, while the RBA diode enhances the avalanche diode’s function by reducing the surge capability of ESD pulses. In short, the 5KP10CA-HRA helps to protect electronic devices from ESD and other external surges.

The 5KP10CA-HRA has a maximum breakdown voltage (VBR) of 9.5V, with excellent clamping capability and peak surge current ratings of 10Amps. The device is designed to bridge a voltage gap between an external source and ground (GND) that is larger than the device’s VBR, preventing peak voltage from going beyond the VBR and damaging other parts of the system. This capability makes the 5KP10CA-HRA is the ideal choice for industries where electronics are regularly exposed to ESD and other transient events.

The 5KP10CA-HRA’s working principle has to do with how it clamps external surges. The device uses an avalanche junction and reverse-biased avalanche junction to reduce the ESD pulse ratings from 8kV (Human Body Model) to a safe level. The avalanche diode inside the device is designed to turn on at around the breakdown voltage (VBR) and then absorb the transient energy and clamp the voltage at the VBR.

The reverse-biased avalanche diode inside the 5KP10CA-HRA helps the avalanche diode by significantly shortening the rise time of the ESD pulse. In other words, the RBA diode reduces the maximum peak voltage seen by the system, thus allowing the avalanche diode to clamp the voltage at the VBR more quickly and efficiently.

Overall, the 5KP10CA-HRA is a versatile and reliable device that is designed to protect electronic systems from harmful transients. The device is made durable and has a wide VBR, allowing it to be used in a variety of industries and applications. And, with its combination of avalanche and reverse-biased avalanche diodes, it is capable of providing superior protection to delicate electronic components.

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