| Allicdata Part #: | 5KP160AE3/TR13-ND |
| Manufacturer Part#: |
5KP160AE3/TR13 |
| Price: | $ 1.25 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 160V 259V P600 |
| More Detail: | N/A |
| DataSheet: |  5KP160AE3/TR13 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 500 +: | $ 1.13448 |
Specifications
| Current - Peak Pulse (10/1000µs): | 19.7A |
| Base Part Number: | 5KP160 |
| Supplier Device Package: | P600 |
| Package / Case: | P600, Axial |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 5000W (5kW) |
| Series: | -- |
| Voltage - Clamping (Max) @ Ipp: | 259V |
| Voltage - Breakdown (Min): | 178V |
| Voltage - Reverse Standoff (Typ): | 160V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tape & Reel (TR) |
Description
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TVS diodes, also known as transient voltage suppressors, are semiconductor devices that protect sensitive electronics from overvoltage transients and electrostatic discharges (ESD). They act as a clamp against electrical spikes by shunting an incoming surge to ground. The 5KP160AE3/TR13 is a popular, unidirectional, bi-level TVS diode that offers a wide range of air gap breakdown voltages (5V – 160V) and fast response time (less than 1ns) for effective protection against transients. In this article, we’ll look at the application field and working principle of the 5KP160AE3/TR13.
Applications
The 5KP160AE3/TR13 unidirectional TVS diode is suitable for a variety of applications, from automotive and industrial controls to telecommunications and consumer electronics. It is used to protect cell phone circuitry, AC/DC power supplies, computers and peripherals, and other electronic devices from incoming surges or spikes. As an automotive device, it is also designed to protect against transients generated by ignition noise, load dump and high-energy pulses. The 5KP160AE3/TR13 is also an ideal component for improving the ESD immunity of audio/video equipment, LCD panels, and other consumer products.
Working Principle
The 5KP160AE3/TR13 is a bi-level overvoltage protection device. It consists of two silicon avalanche diodes connected in series, with each diode having its own breakdown voltage. When the voltage across the diode exceeds either of the breakdown voltages, the diode enters the avalanche breakdown region and conducts current. This clamps the voltage and prevents further damage to the protected electronic device. The 5KP160AE3/TR13 has a fast response time of less than 1ns, making it ideal for protecting against transients caused by lightning, ESD, or other sources.
The 5KP160AE3/TR13 is capable of enduring high peak power, due to its low clamping voltage and low dynamic impedance. This feature makes it ideal for providing protection to vulnerable components in circuits operating at high voltage and high power, such as automotive control systems. The 5KP160AE3/TR13 is also designed with insulated gate bipolar transistors (IGBTs) to minimize the EMI generated by high-speed switching amplifiers.
In summary, the 5KP160AE3/TR13 unidirectional TVS diode is a reliable and effective protection device for a wide variety of applications. It offers a wide range of air gap breakdown voltages, fast response time, and the ability to handle high peak power. The insulated gate bipolar transistors ensure that it is capable of providing protection from EMI in high-speed switching amplifiers. The 5KP160AE3/TR13 is an ideal component for protecting sensitive electronic devices from overvoltage transients and ESD.
Applications
The 5KP160AE3/TR13 unidirectional TVS diode is suitable for a variety of applications, from automotive and industrial controls to telecommunications and consumer electronics. It is used to protect cell phone circuitry, AC/DC power supplies, computers and peripherals, and other electronic devices from incoming surges or spikes. As an automotive device, it is also designed to protect against transients generated by ignition noise, load dump and high-energy pulses. The 5KP160AE3/TR13 is also an ideal component for improving the ESD immunity of audio/video equipment, LCD panels, and other consumer products.
Working Principle
The 5KP160AE3/TR13 is a bi-level overvoltage protection device. It consists of two silicon avalanche diodes connected in series, with each diode having its own breakdown voltage. When the voltage across the diode exceeds either of the breakdown voltages, the diode enters the avalanche breakdown region and conducts current. This clamps the voltage and prevents further damage to the protected electronic device. The 5KP160AE3/TR13 has a fast response time of less than 1ns, making it ideal for protecting against transients caused by lightning, ESD, or other sources.
The 5KP160AE3/TR13 is capable of enduring high peak power, due to its low clamping voltage and low dynamic impedance. This feature makes it ideal for providing protection to vulnerable components in circuits operating at high voltage and high power, such as automotive control systems. The 5KP160AE3/TR13 is also designed with insulated gate bipolar transistors (IGBTs) to minimize the EMI generated by high-speed switching amplifiers.
In summary, the 5KP160AE3/TR13 unidirectional TVS diode is a reliable and effective protection device for a wide variety of applications. It offers a wide range of air gap breakdown voltages, fast response time, and the ability to handle high peak power. The insulated gate bipolar transistors ensure that it is capable of providing protection from EMI in high-speed switching amplifiers. The 5KP160AE3/TR13 is an ideal component for protecting sensitive electronic devices from overvoltage transients and ESD.
The specific data is subject to PDF, and the above content is for reference
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| 5KP150CA-HR | Littelfuse I... | 9.7 $ | 1000 | TVS DIODE 150V 243V P600 |
| 5KP160CA-G | Comchip Tech... | 0.87 $ | 1000 | TVS DIODE 160V 259V R-6 |
| 5KP190A | Littelfuse I... | 1.01 $ | 1000 | TVS DIODE 190V 310V P600 |
| 5KP10A-E3/73 | Vishay Semic... | 0.88 $ | 1000 | TVS DIODE 10V 17V P600 |
| 5KP100HE3/73 | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 100V 179V P600 |
| 5KP10AHE3/73 | Vishay Semic... | 1.06 $ | 1000 | TVS DIODE 10V 17V P600 |
| 5KP17CA | Littelfuse I... | 1.11 $ | 1000 | TVS DIODE 17V 27.6V P600 |
| 5KP16CE3/TR13 | Microsemi Co... | 1.3 $ | 1000 | TVS DIODE 16V 28.8V P600 |
| 5KP180CA-HRA | Littelfuse I... | 9.55 $ | 1000 | TVS DIODE 180V 292V P600 |
| 5KP100A | Littelfuse I... | -- | 800 | TVS DIODE 100V 162V P600 |
| 5KP17A | Littelfuse I... | 1.01 $ | 1000 | TVS DIODE 17V 27.6V P600 |
| 5KP110A-HR | Littelfuse I... | 9.7 $ | 1000 | TVS DIODE 110V 177V P600 |
| 5KP110CE3/TR13 | Microsemi Co... | 1.3 $ | 1000 | TVS DIODE 110V 196V P600 |
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| 5KP130A-B | Littelfuse I... | 1.43 $ | 1000 | TVS DIODE 130V 209V P600 |
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| 5KP18CA-G | Comchip Tech... | 0.87 $ | 1000 | TVS DIODE 18V 29.2V R-6 |
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