5KP26A-E3/54

The 5KP26A-E3/54 TVS Diode is a four-level diode that provides high-level protection for applications such as data and power line protection and telecom line protection. It is designed to clamp high-speed data and power line transients by placing a bridge between the positive and negative lines of the circuit, which can absorb energy and prevent high transients from damaging the device. These types of TVS diodes use metal-oxide-semiconductor (MOS) technology to achieve a low turn-on and low reverse leakage current.

The 5KP26A-E3/54 features an ultra-low capacitance of 0.27pF and a high peak pulse current of 14A. This makes it ideal for use in high-speed, low-capacitance circuits. The 5KP26A-E3/54 has a breakdown voltage of 19.5V and peak power dissipation of 2.0W when mounted on a printed circuit board (PCB). This makes it suitable for use as a general-purpose diode for a variety of applications such as data and telecom line protection and also for power applications such as automotive and industrial power systems.

The 5KP26A-E3/54 has a working principle that is based on the Metal-Oxide-Semiconductor (MOS) technology. This technology utilizes two layers of metal and oxide that are isolated from each other. The junction between these two layers allows two components to be connected to the same circuit board without any electrical path forming between them. When a high voltage is applied to the MOS diode, the oxide layer becomes a current conducting channel and the diode turns on. This allows the diode to clamp large transients and spikes, preventing them from damaging the circuit. Once the transient or spike has passed and the diode has returned to its quiescent current, the oxide layer reverts back to an insulating layer and the diode is turned off.

The 5KP26A-E3/54 is the perfect device for high-speed communications, power, and other general-purpose applications. It has a low capacitance of 0.27pF and a peak pulse current of 14A so it can easily handle high-speed, low-capacitance circuits. It has a breakdown voltage of 19.5V and a peak power dissipation of 2.0W when mounted on a PCB. This makes it suitable for automotive and industrial power systems as well as telecom and data line protection.

In conclusion, the 5KP26A-E3/54 TVS Diode is an ideal choice for many applications such as high-speed communication, power, and general-purpose applications. It offers high-level protection, low capacitance, and low leakage current. It also has a breakdown voltage of 19.5V and a peak power dissipation of 2.0W when mounted on a PCB. Its working principle is based on the Metal-Oxide-Semiconductor (MOS) technology, which allows it to clamp large transients and spikes without damaging the circuit.