5KP54CE3/TR13 Allicdata Electronics

5KP54CE3/TR13 Circuit Protection

Allicdata Part #:

5KP54CE3/TR13-ND

Manufacturer Part#:

5KP54CE3/TR13

Price: $ 1.30
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 54V 96.3V P600
More Detail: N/A
DataSheet: 5KP54CE3/TR13 datasheet5KP54CE3/TR13 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
500 +: $ 1.17496
Stock 1000Can Ship Immediately
$ 1.3
Specifications
Current - Peak Pulse (10/1000µs): 51.9A
Base Part Number: 5KP54
Supplier Device Package: P600
Package / Case: P600, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Series: --
Voltage - Clamping (Max) @ Ipp: 96.3V
Voltage - Breakdown (Min): 60V
Voltage - Reverse Standoff (Typ): 54V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS - Diodes

TVS (Transient Voltage Suppressor) diodes are semiconductor devices designed to protect electrical components from transient overvoltage, electrostatic discharges, and lightning surges. They act as clamping devices, absorbing transient energy, targeting itself to absorb voltage spikes, and protecting the circuit. In essence, TVS diodes are like a safety valve for protection of electrical components from harmful overvoltages and surges.

The TVS diode 5KP54CE3/TR13 is a unidirectional device. It consists of a silicon avalanche diode with integrated resistors and employs an Anti-Parallel Thyristor (APT) structure. The 5KP54CE3/TR13 is designed for bidirectional ESD protection applications, such as SCSI and other computer I/O, and can withstand very high-energy levels with minimal clamping voltage.

The main application field of the 5KP54CE3/TR13 is the protection of electronic systems against external transient overvoltage. It provides protection against electro-static discharges (ESD) and other transients caused by lightning discharges or other sources of overvoltage. Despite the small size, the device is able to absorb and dissipate very high energy transients of up to 25kV.

The working principle of the 5KP54CE3/TR13 is based on its APT structure. In essence, the APT structure amplifies the voltage during a transient time frame. It is this amplification that makes it so successful in protecting circuits from transients, as it absorbs the excess voltage allowing the forward-biased diode to shun out the excess energy.

The 5KP54CE3/TR13 also has an integrated resistor to provide additional protection against high-energy transients. The resistor, also known as Zenner or Triggered Resistor, can absorb the excess energy from the transient voltage which further reduces any transients that the forward-biased silicon avalanche diode is unable to handle. The resistor also helps to discharge the diode after the transient has ended.

The 5KP54CE3/TR13\'s combination of direct clamping and integrated resistor allows it to absorb both low- and high-energy transients. This makes it an ideal choice for protection against different sources of transient overvoltage and electrical surges.

In conclusion, the 5KP54CE3/TR13 provides a cost-effective solution for protection against transients. It is a unidirectional device that uses an Anti-Parallel Thyristor structure, which amplifies the transient voltage, allowing the forward-biased diode to shun out the excess energy and then an integrated resistor, also known as Zenner or Triggered Resistor, to absorb the excess energy from the transient voltage. This combination of direct clamping and integrated resistor allows it to absorb both low- and high-energy transients and makes it an ideal choice for protection against different sources of transient overvoltage and electrical surges. Overall, it is an excellent device for protecting electrical components from transient overvoltage.

The specific data is subject to PDF, and the above content is for reference

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