5KP64A-TP Allicdata Electronics
Allicdata Part #:

5KP64A-TPTR-ND

Manufacturer Part#:

5KP64A-TP

Price: $ 0.76
Product Category:

Circuit Protection

Manufacturer: Micro Commercial Co
Short Description: TVS DIODE 64V 103V R-6
More Detail: N/A
DataSheet: 5KP64A-TP datasheet5KP64A-TP Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
500 +: $ 0.69458
1000 +: $ 0.57551
2500 +: $ 0.53582
5000 +: $ 0.52920
Stock 1000Can Ship Immediately
$ 0.76
Specifications
Current - Peak Pulse (10/1000µs): --
Base Part Number: 5KP
Supplier Device Package: R-6
Package / Case: R6, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Series: --
Voltage - Clamping (Max) @ Ipp: 103V
Voltage - Breakdown (Min): 71.1V
Voltage - Reverse Standoff (Typ): 64V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

5KP64A-TP, belonging to the TVS (Transient Voltage Suppressor) - Diodes, is a monolithic bidirectional silicon avalanche diode. It has a wide application field from suppressing voltage transients induced by lightning and other transient voltage sources. It is an ideal choice for protecting electronic equipment from voltage spikes or voltage transients.

The 5KP64A-TP has a peak pulse power rating of 5KW. It can also handle 100A pulse peak current with a 10/1000µs pulse width. The device has a working voltage of 64V. It has a low dynamic resistance of 3.5ohms and low reverse leakage of 50µA.

The working principle of the 5KP64A-TP is based on the avalanche breakdown effect. As the voltage across the diode increases, the current flowing through the diode increases too, as electrons from the n-doped layer cross the junction with electrons of the p-doped layer. As current increases, the voltage at the junction creates an electric field, and the strong electric field causes electrons to accelerate rapidly and gain enough energy to initiate further electrical breakdown. This causes a further increase in current and voltage as the breakdown reaction increases exponentially.

The stimulation of avalanche breakdown is beneficial in TVS - Diodes, because it provides a low-voltage clamping solution to help suppress voltage transients. When a transient voltage is applied, the 5KP64A-TP will clamp the voltage to a lower level and thus protects the electronic equipment from the damaging voltage spike.

The 5KP64A-TP is extensively used in power management applications such as motor control systems, switching power supplies, and lighting systems. It can also find its use in automotive and telecommunications applications. Its low capacitance and fast response time make it suitable for communication applications such as USB2.0, ESD protection, Ethernet, and CAT5 cable protection.

The advantages of 5KP64A-TP lies in its bidirectional protection capabilities, fast response time, low dynamic resistance, and its peak power rating. This makes the device suitable for a wide variety of applications that require fast protection from voltage transients.

The specific data is subject to PDF, and the above content is for reference

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