60HFUR-100 Allicdata Electronics
Allicdata Part #:

60HFUR-100-ND

Manufacturer Part#:

60HFUR-100

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 100V 60A DO203AB
More Detail: Diode Standard 100V 60A Chassis, Stud Mount DO-203...
DataSheet: 60HFUR-100 datasheet60HFUR-100 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 80ns
Current - Reverse Leakage @ Vr: 50µA @ 100V
Capacitance @ Vr, F: --
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -40°C ~ 125°C
Base Part Number: 60HFUR
Description

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The 60HFUR-100 is a solid-state single rectifier diode, a electronic device composed of a semiconductor material with two terminals that, when voltage is applied, falls into a conducting state. This diode is designed to allow current to flow in one direction only, effectively acting as a one-way valve, using the principle of the rectification of alternating current. This type of diode, with its fast soft recovery time and low forward voltage drop, has a wide range of applications in power systems to provide over-voltage protection, or as protection from impulse transients.

The 60HFUR-100 operates in a rated temperature range from -40˚C to +125˚C making it suitable for many industrial applications such as in the harsh temperature environments of the automotive, aerospace, and defense industry. It has a low forward voltage drop of 0.92V typical (1.1 V max) at 1 Amp and a low reverse leakage current of 1mA at 25˚C. This diode also offers low EMI and good RF performance, ensuring a secure connection.

The 60HFUR-100 has a very typical working principle. The current enters the screw terminal at the anode end, passing through the diode body and out through the cathode. In the PN junctions of the body, a rectification process takes place when an applied forward voltage is greater than the barrier voltage of the junction. The barrier voltage of the junction depends on the doping profile and ratio of the two semiconductors in the junction. The electrons are only allowed to pass through the junction in one direction, from the anode to the cathode. The electrons at the junction will therefore reach a higher energy state, and this energy is released in the form of heat.

The rectifying properties of the 60HFUR-100 come from the PN junction in the diode body, which allows for a drop in voltage of the negative “wave” of the alternating current, resulting in a rectified output. This rectified output, in combination with the fast how recovery time, makes the 60HFUR-100 ideal for applications needing over-voltage protection and/or protection from impulse transients. This protection is offered in the form of an over-voltage shutdown, which will limit the voltage to a predetermined threshold.

In addition to the protection offered, the 60HFUR-100 offers excellent EMI and RF performance, making it suitable for applications dealing with high frequency signals. The diode also offers a large capacity for current allowing it to serve as a current limiter and provide current regulation when used in a linear or pulse circuit. This excellent performance, low voltage drop, and low leakage along with its wide temperature tolerance makes the 60HFUR-100 an ideal choice for a wide range of DC power applications.

The specific data is subject to PDF, and the above content is for reference

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