6116LA20SOG Allicdata Electronics
Allicdata Part #:

6116LA20SOG-ND

Manufacturer Part#:

6116LA20SOG

Price: $ 2.44
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 16K PARALLEL 24SOIC
More Detail: SRAM - Asynchronous Memory IC 16Kb (2K x 8) Parall...
DataSheet: 6116LA20SOG datasheet6116LA20SOG Datasheet/PDF
Quantity: 1000
310 +: $ 2.22543
Stock 1000Can Ship Immediately
$ 2.44
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kb (2K x 8)
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 24-SOIC
Base Part Number: IDT6116
Description

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The 6116LA20SOG is a 64k x 1 bit dynamic random access memory or DRAM. It is used by low power devices, especially in miniature consumer electronics. This memory is ideal for design-in applications during development of new consumer devices and products. The 6116LA20SOG utilizes a complementary MOS or CMOS process and is both energy efficient and robust against radiation.

The 6116LA20SOG is composed of an array of 64k x 1 bit cells. Each cell has two gates; the read/write gate (R/W) and the write enable (WE) gate. In order to access a cell\'s contents, voltages must be applied to the appropriate gates. Depending upon the commands being issued to the memory, the WE and R/W gates will either be enabled or disabled. This enables the DRAM to incrementally read and write cells without having to read the entire contents.

When a read or write command is issued, the appropriate signal must be sent to the WE gate. This signal will enable the write operation, while a de-assertion of the signal will terminate the write process. Similarly, when a read command is sent, the signal must be sent to the R/W gate. When this signal is present, a row of data begins to be read from the cell. This data is read in successive bursts, with an auto-refresh mechanism to refresh the data as it is presented. To terminate the read process, the R/W signal is de-asserted and the data returned to its original state.

The 6116LA20SOG can operate at voltages between 4.5V to 7.5V and at speeds of up to 70ns. This memory is suitable for use in low-power applications such as data acquisition, embedded memory, and instrument control. Additionally, the 6116LA20SOG is equipped with on-chip ECC (Error Correction Code) circuitry along with auto-refresh and power down features to help maintain data integrity during operation. This also allows for much higher data throughput and improved system performance.

In addition to its primary purpose as a memory device, the 6116LA20SOG has now been adapted for use in an increasing number of applications. For example, it is now used in data monitoring systems. Here, it is used to store readings and other data related to the monitored systems. The 6116LA20SOG can also be used in navigation and navigation assistance systems, where it provides for storage of navigation data and other related information. Another application is in medical devices, where the memory device is used to store patient data.

In short, the 6116LA20SOG is an extremely long-lasting and robust dynamic random access memory device which is used in a variety of applications. Its low power requirements, high reliability, and on-chip ECC circuitry make it an ideal choice for use in a variety of applications which require data storage and retrieval. The 6116LA20SOG is well-suited for use in small consumer electronic devices, and its small size and low power requirements make it suitable for use in miniature systems as well.

The specific data is subject to PDF, and the above content is for reference

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