| Allicdata Part #: | 6116LA45DB-ND |
| Manufacturer Part#: |
6116LA45DB |
| Price: | $ 8.85 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | IDT, Integrated Device Technology Inc |
| Short Description: | IC SRAM 16K PARALLEL 24CDIP |
| More Detail: | SRAM - Asynchronous Memory IC 16Kb (2K x 8) Parall... |
| DataSheet: | 6116LA45DB Datasheet/PDF |
| Quantity: | 1000 |
| 300 +: | $ 8.03719 |
Specifications
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | SRAM |
| Technology: | SRAM - Asynchronous |
| Memory Size: | 16Kb (2K x 8) |
| Write Cycle Time - Word, Page: | 45ns |
| Access Time: | 45ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 4.5 V ~ 5.5 V |
| Operating Temperature: | -55°C ~ 125°C (TA) |
| Mounting Type: | Through Hole |
| Package / Case: | 24-CDIP (0.600", 15.24mm) |
| Supplier Device Package: | 24-CDIP |
| Base Part Number: | IDT6116 |
Description
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The Application Field and Working Principle of 6116LA45DB Memory
6116LA45DB is a type of dynamic random-access memory (DRAM) that is used in many electronic products. It has the capability to store large amounts of data in the form of binary coded numbers. Because of this, it is often used in computers, laptops, tablets, and other electronic equipment.The 6116LA45DB memory is a type of integrated circuit (IC) device, meaning it is a combination of multiple components, such as resistors and transistors, that are built onto a single piece of silicon. It is designed to be used in modules, and because it does not require the building of circuits within the unit, it saves on the space in the circuit board.The 6116LA45DB memory also has a static random-access memory (SRAM) option. This means that the device stores the data statically, and is not updated or modified in any way during operation. SRAM is typically used in more specialized applications, such as keeping track of settings or providing data in order to set up the device.The working principle of the 6116LA45DB memory is based on DRAM technology, which is an abbreviation for dynamic random-access memory. DRAM is a type of memory that is used in a variety of electronic devices. It works by storing data in the form of electrical charges on a dynamic storage medium.The operation of the 6116LA45DB memory is based on the movement of charge between two plates (called the capacitor and transistor). When a signal is received, the transistor supplies the capacitor with a positive charge, which moves from the transistor to the capacitor. Then, the capacitor stores the charges which can then be accessed or modified by inputting a command.The 6116LA45DB memory is typically used in applications such as consumer electronics, scientific instruments, and telecommunications. It is a viable option for those who need a reliable source of data storage, and is often chosen due to its small size and low power consumption.The 6116LA45DB memory is reliable, robust, and cost effective. It offers a wide range of applications, making it a popular choice for many electronic devices. Its high data performance and reliability make it an ideal choice for a wide range of applications and devices.In summary, the 6116LA45DB memory is a reliable and robust option with a wide range of applications. It is a type of dynamic random-access memory that is built onto an IC. It has the capability to store large amounts of data, and is often chosen due to its small size and low power consumption. The working principle of the 6116LA45DB memory is based on DRAM technology, and it is typically used in applications such as consumer electronics, scientific instruments, and telecommunications.The specific data is subject to PDF, and the above content is for reference
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6116LA45DB Datasheet/PDF