6116LA20TPGI Allicdata Electronics
Allicdata Part #:

6116LA20TPGI-ND

Manufacturer Part#:

6116LA20TPGI

Price: $ 2.82
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 16K PARALLEL 24DIP
More Detail: SRAM - Asynchronous Memory IC 16Kb (2K x 8) Parall...
DataSheet: 6116LA20TPGI datasheet6116LA20TPGI Datasheet/PDF
Quantity: 1000
300 +: $ 2.56452
Stock 1000Can Ship Immediately
$ 2.82
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kb (2K x 8)
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 24-DIP (0.300", 7.62mm)
Supplier Device Package: 24-PDIP
Base Part Number: IDT6116
Description

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Memory is an essential component of many computers. It plays an important role in storing data, executing programs, and creating different forms of storage. The 6116LA20TPGI is a type of memory device developed by Micron Technology, and is widely used in various applications. In this article, we will discuss the 6116LA20TPGI’s application fields and working principles.

Application Fields

The 6116LA20TPGI is designed for industrial, automotive, and other high-end applications. It is often used in Automotive Distributed Data Storage (ADDSS), which is a system for managing large amounts of data for automotive applications. It is also widely used in unmanned aerial vehicle (UAVs), which require large amounts of data storage and processing capacity.

The 6116LA20TPGI is also used in medical imaging systems and research laboratories, where high-resolution, low-latency data storage is necessary. It offers a cost-effective solution for these high-end applications and offers a high degree of reliability and flexibility. Additionally, it is suited for mission-critical and real-time applications, such as Internet of Things (IoT) and Industrial Internet of Things (IIoT) applications.

Working Principle

The 6116LA20TPGI utilizes a multi-level phase change memory (PCM) technology. It is based on a silicon microstructure that is designed to create short-term storage. The PCM memory concept makes use of reversible changes in the material structure of a wide range of crystalline materials. This material is referred to as the "phase-change material". The crystal structure of the material can be switched from crystalline to amorphous, and vice versa, depending on the input power or voltage level. This reversible change from crystalline to amorphous, and back again, allows for the storage and retrieval of data.

The 6116LA20TPGI makes use of a dual-level PCM, meaning the memory structure is organized in two levels. Each level is composed of two bytes of data that can each store a single bit. These bits are stored in a two-state system, with each state representing either a 0 or a 1. When a read operation is executed, the memory will read out the stored bits and provide a response that represents the data stored in the two bytes. This allows for a fast and reliable read operation, which is one of the primary benefits of the 6116LA20TPGI.

The 6116LA20TPGI also employs error protection technology to ensure the accuracy of data stored in the memory. This technology is based on an "error correction code" (ECC) that is embedded within the memory. The ECC will detect any errors in the stored data, and can then correct or "repair" these errors before they can cause any damage or data loss.

The 6116LA20TPGI is a powerful and versatile memory device, and is well suited for many high-end applications. Its application fields include automotive, industrial, and medical fields, to name a few. Additionally, due to its usage of PCM technology and error protection, it is both reliable and fast. As a result, it is an ideal choice for mission-critical applications, where performance and reliability are essential.

The specific data is subject to PDF, and the above content is for reference

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