6116SA150DB

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6116SA150DB Memory

The 6116SA150DB is a dynamic random access memory (DRAM) device that is used in static memory designs. It is a Low Voltage CMOS (LVCMOS) device and is available in both 2 and 4 cells per bank. This device supports a voltage range of 0.55V to 1.7V, making it suitable for a wide range of applications.

The 6116SA150DB is based on a 128Kbit, 16M-bit organization structure. It is packaged in a standard SOIC-14 or TSOP-14 device and it has an access time of 150ns. The device is also available in a TSOP-14 package with an access time of 125ns and a voltage range of 0.6V to 1.6V.

The 6116SA150DB features a combination of synchronous and asynchronous operations. Asynchronous operations allow data access without clocking and enable applications requiring low latency data access. Synchronous operations provide a clocking interface for applications requiring higher performance. The device also features a simple row and/or column addressing architecture for straightforward addressing as well as a 7-state output for easy control of data write operations.

The 6116SA150DB can be used in a wide array of applications, ranging from cellular phones and PDAs to personal computer and server memory applications. It is also suitable for digital signal processing (DSP) applications, including video and imaging applications that require fast access times.

When it comes to the principle of operation of the 6116SA150DB memory device, it works in a simple manner. Data is stored in an array of cells and access to each cell requires the row and column to be addressed. Data is written to the memory when the row and column are both addressed and the data is transferred to the cell. The data is then stored until it is read. The data is then read when the column and row are both addressed. The data is then latched from the cell and the data stored in the cell is retained.

To ensure data integrity, the 6116SA150DB implements error-correcting code (ECC) technology. ECC helps to detect and correct data corruption caused by single-bit errors. ECC is important for applications where reliability and data integrity are critical. This device also features self-refresh supports that meets the requirements of low power, high reliability designs.

Conclusion

The 6116SA150DB is a low voltage dynamic random access memory (DRAM) device that is designed for a wide range of applications. It is based on a 128Kbit, 16M-bit organization structure and it is available in both 2 and 4 cells per bank to suit the needs of different applications. The 6116SA150DB also features synchronous and asynchronous operations and it implements error-correcting code (ECC) technology to provide high data integrity.

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