6116LA25DB Allicdata Electronics
Allicdata Part #:

6116LA25DB-ND

Manufacturer Part#:

6116LA25DB

Price: $ 9.23
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 16K PARALLEL 24CDIP
More Detail: SRAM - Asynchronous Memory IC 16Kb (2K x 8) Parall...
DataSheet: 6116LA25DB datasheet6116LA25DB Datasheet/PDF
Quantity: 1000
150 +: $ 8.40035
Stock 1000Can Ship Immediately
$ 9.23
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kb (2K x 8)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 24-CDIP (0.600", 15.24mm)
Supplier Device Package: 24-CDIP
Base Part Number: IDT6116
Description

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The 6116LA25DB is a type of memory which is designed for large capacitive refresh computer memories. It is built using CMOS, metal-oxide semiconductor, technology which is developed to reduce power consumption when used in computers and other modern electronic devices. It is widely used in computers and other devices that require a large amount of memory for their operations. The 6116LA25DB is designed for a wide range of applications, including embedded systems, gaming consoles, portable devices, and more.

The 6116LA25DB features an impressive array of features which make it a preferred choice for many applications. It consists of 2,048 rows, each of which has an 8 bit refresh capability as well as its own 8 bit programmable output. The refresh circuitry also includes an optional parity bit which allows for a more efficient data transfer. The IC also includes a read/write function that allows users to save data and program them into the device.

The 6116LA25DB’s working principle is based on the concept of an electrostatic charge transfer. This type of memory works by using a capacitive discharge which is transferred to a source of charge. This charge is then transferred to the memory cell, which is usually made from a type of ferroelectric material. Once the charge is stored in the memory cell, it can be accessed as needed in order to perform a variety of operations. The device is also capable of recognizing and storing range of logic levels.

The 6116LA25DB is an incredibly versatile device and has found a variety of applications in the computer industry. It has been used in large capacity memory systems and embedded systems which require a high level of memory stability. It is also very popular in gaming consoles for storing large amounts of data and game information. Other applications for the 6116LA25DB include medical devices, military equipment, telecommunications gear, automation equipment, navigation systems, and many more.

The 6116LA25DB is an extremely reliable device and is suitable for a variety of high performance applications. It offers a high level of data integrity and has a low latency time, allowing for faster transactions. The device also supports a wide range of operating voltages, which makes it ideal for both standard and specialty applications. The 6116LA25DB is a cost effective choice for high performance memory needs and offers users a choice in how they choose to store and access data.

The specific data is subject to PDF, and the above content is for reference

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