6116SA20TDB Allicdata Electronics
Allicdata Part #:

6116SA20TDB-ND

Manufacturer Part#:

6116SA20TDB

Price: $ 9.23
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 16K PARALLEL 24CDIP
More Detail: SRAM - Asynchronous Memory IC 16Kb (2K x 8) Parall...
DataSheet: 6116SA20TDB datasheet6116SA20TDB Datasheet/PDF
Quantity: 1000
180 +: $ 8.40035
Stock 1000Can Ship Immediately
$ 9.23
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kb (2K x 8)
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 24-CDIP (0.300", 7.62mm)
Supplier Device Package: 24-CDIP
Base Part Number: IDT6116
Description

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Memory

6116SA20TDB is a type of Dynamic Random Access Memory (DRAM) that is commonly used to store data and information in various applications. It is composed of memory cells that contain both static and dynamic components and is based on a hybrid technology combining the advantages of both static and dynamic RAM. In particular, this type of DRAM offers an ideal balance between speed, power consumption and density.

The applications of this type of memory vary depending on the size and speed of the memory. It is used in many embedded systems, such as for automotive, industrial and medical applications. It is also used in DSP boards and servers, as well as for storage applications. Moreover, it is increasingly used for data-intensive applications, such as those related to artificial intelligence and the Internet of Things (IoT).

The working principle of the 6116SA20TDB memory is relatively simple. The memory cells can store either 0s or 1s, depending on the electricity applied. To write data, electrical current is sent to a specific cell, telling it either to store a 0 or 1. To read the data, electrical current is sent to the cell, and its logic state is detected. The stored data will stay in the cell until another writing process occurs.

In addition, this type of memory offers enhanced security. It includes various technologies, such as ECC (error correction code) which can detect and correct single-bit errors, and ECC with SEC (sensitive error checking) which is further activated to detect multiple-bit errors. Furthermore, the memory has built-in redundancy features which help increase data reliability and prevent data corruption.

In conclusion, 6116SA20TDB is a type of DRAM designed for a wide range of applications. It provides faster, more efficient and more secure storage solutions than the traditional memory, making it an ideal choice for many applications. Through its power-saving and error-correction capabilities, it has become an integral part of many highly-complex systems, such as those related to artificial intelligence and the Internet of Things.

The specific data is subject to PDF, and the above content is for reference

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