6116SA90TDB

Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Asynchronous
Memory Size:	16Kb (2K x 8)
Write Cycle Time - Word, Page:	90ns
Access Time:	90ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	-55°C ~ 125°C (TA)
Mounting Type:	Through Hole
Package / Case:	24-CDIP (0.300", 7.62mm)
Supplier Device Package:	24-CDIP
Base Part Number:	IDT6116

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Introduction

The 6116SA90TDB Memory is a device designed for applications that require high-speed data storage and retrieval. The 6116SA90TDB Memory is a static random access memory (SRAM) which is used for fast, nonvolatile access to data stored in a variety of different formats. It is typically used in applicationssuch as supercomputers, database systems, microprocessors, video game consoles, and embedded systems.

Application Field

The 6116SA90TDB Memory is commonly used in a variety of applications. It is suitable for use in high-end computing applications such as supercomputing, databases, and microprocessors, where high-speed transfer of data and operations is required. Additionally, it is often used in embedded systems and video game consoles, due to its ability to store data while still providing access quickly.

Working Principle

The 6116SA90TDB is a static random access memory device that is used for high-speed access to data stored in different formats. The SRAM memory device can be accessed rapidly, and it is non-volatile, meaning the data that is stored will remain in the device even when power is removed. Furthermore, the device is typically organized into a number of different cells where each cell contains several bits of data.To access data stored in the 6116SA90TDB, a single clock pulse is sent to the device. When the clock pulse is delivered, an internal address is used to access the data. This address is then decoded by the device, which is then used to locate the relevant data in the memory. Once the memory is located, the data is then transferred to the processor or other data path.The 6116SA90TDB uses a static architecture which means that the data remains in the device even if power is removed. This is due to the fact that each cell is connected to the power supply. This ensures that the data will remain in the device even if the power is turned off.

Conclusion

The 6116SA90TDB Memory is a static random access memory (SRAM) device which is used for fast, non-volatile access to data. It is commonly used in applications such as supercomputing, databases, microprocessors, video game consoles, and embedded systems. The device functions by sending a single clock pulse to the device which is used to access the data stored in the memory cells. The memory device is then used to transfer the data to the processors or other data paths. The 6116SA90TDB is a reliable and efficient memory device that can provide fast access to stored data.

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