| Allicdata Part #: | 6585_2N4209-ND |
| Manufacturer Part#: |
6585_2N4209 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PNP GENERAL PURPOSE |
| More Detail: | Bipolar (BJT) Transistor PNP 15V 50mA 850MHz 300mW... |
| DataSheet: | 6585_2N4209 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 50mA |
| Voltage - Collector Emitter Breakdown (Max): | 15V |
| Vce Saturation (Max) @ Ib, Ic: | 800mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max): | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 1mA, 5V |
| Power - Max: | 300mW |
| Frequency - Transition: | 850MHz |
| Operating Temperature: | 200°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | Die |
| Supplier Device Package: | Die |
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Introduction
The 6585_2N4209 is a bipolar junction transistor (BJT) device, a type of current-controlled electrical switch. This transistor consists of three distinct layers: a base layer sandwiched between two different elements called the emitter and the collector. BJTs are semiconductor devices, which are capable of operating as a switch, amplifier, and rectifier. In this article, we will discuss the application field and working principle of the 6585_2N4209.
Application field of 6585_2N4209
The 6585_2N4209 is suitable for use in various electrical applications, including digital electronics, audio effects, radio systems, power switching, and voltage regulation. It can be used as a switch in digital logic circuits and in audio amplifiers. It also finds application in radio frequency (RF) and microwave applications where it can support higher power levels than standard BJTs due to the higher gain of the 6585_2N4209.
Working Principle of 6585_2N4209
In a BJT device, a current is applied to the base layer, which induces a flow of electrons from the emitter to the collector. This action creates a lower voltage level on the base-to-emitter junction (called VBE) than what is found between the collector and the emitter (called VCE). The magnitude of the VCE can be adjusted by adjusting the amount of current flowing through the base layer. This is done by either increasing or decreasing the current applied to the base layer.
The 6585_2N4209 is an NPN device, which means that an N-type material (e.g., silicon) is used as the base layer and P-type materials (e.g., boron) are used as the emitter and collector layers. As the current flows through the base-emitter junction, it is amplified and this amplified current is transported to the collector. This device has a high current gain (hfe) which makes it suitable for use in high power applications.
The 6585_2N4209 is an NPN device, which means that an N-type material is used as the base layer and P-type materials are used as the emitter and collector layers. As the current flows through the base-emitter junction, it is amplified and this amplified current is transported to the collector. This device has a high current gain (hfe) which makes it suitable for use in high power applications.
Advantages of 6585_2N4209
The 6585_2N4209 offers several advantages in comparison to other transistors, such as low power consumption and high current gain. It is also very efficient at converting small signals into large ones, making it ideal for use in audio amplifiers and radio systems. Additionally, the 6585_2N4209 has a wide voltage range, which makes it suitable for use with a variety of voltages. The 6585_2N4209 is also relatively small in size, making it a good choice for tight spaces.
Conclusion
The 6585_2N4209 is a bipolar junction transistor (BJT) device, capable of operating as a switch or amplifier. It has a wide range of applications, from digital electronics to RF and microwave applications, and also possesses high current gain, low power consumption and a wide voltage range. It is an ideal choice for engineers who are looking for an efficient and reliable transistor.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| 658519-1 | TE Connectiv... | 278.59 $ | 1000 | BASE PLATE |
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| PE-65854NLST | Pulse Electr... | 0.0 $ | 1000 | TRANSFORMER |
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| 6585_2N4209 | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP GENERAL PURPOSE... |
| PE-65854NLT | Pulse Electr... | -- | 1500 | COMMON MODE CHOKE 4LN SMD... |
| PE-65855 | Pulse Electr... | -- | 1000 | COMMON MODE CHOKE 2LN SMD... |
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| PE-65855NL | Pulse Electr... | 2.37 $ | 998 | COMMON MODE CHOKE 2LN SMD... |
| PE-65855NLS | Pulse Electr... | 0.0 $ | 1000 | TRANSFORMER |
| 6585-0-00-80-00-00-03-0 | Mill-Max Man... | 0.34 $ | 1000 | CONN PC PIN CIRCPC Pin Te... |
| PE-65857NLT | Pulse Electr... | -- | 1000 | COMMON MODE CHOKE 4LN SMD... |
| PE-65857NLS | Pulse Electr... | 0.0 $ | 1000 | TRANSFORMER |
| PE-65857NL | Pulse Electr... | -- | 727 | COMMON MODE CHOKE 4LN SMD... |
| PE-65857T | Pulse Electr... | 0.0 $ | 1000 | TRANSFORMERLine Common Mo... |
| 204-6585-50-0602J | 3M | 4.44 $ | 1000 | SOCKET LASER DIODE 4POS |
| 65850 SL002 | Alpha Wire | 3.47 $ | 1000 | CABLE 50COND 18AWG SLATE ... |
| PE-65857NLST | Pulse Electr... | 0.0 $ | 1000 | TRANSFORMER |
| PE-65854T | Pulse Electr... | -- | 1000 | COMMON MODE CHOKE 4LN SMD... |
| PE-65854NLS | Pulse Electr... | 0.0 $ | 1000 | TRANSFORMER |
| 6585-0-00-01-00-00-03-0 | Mill-Max Man... | 0.34 $ | 1000 | CONN PC PIN CIRC .020DIA ... |
| PE-65855NLST | Pulse Electr... | 0.0 $ | 1000 | TRANSFORMER |
| 203-2-6585-1 | Sensata-Airp... | 132.17 $ | 1000 | CIR BRKR ROCKER |
| PE-65856NL | Pulse Electr... | 0.0 $ | 1000 | TRANSFORMER 1500VRMS 50UH |
| 658535-3 | TE Connectiv... | 184.75 $ | 1000 | MESSERSTOESSEL KL |
| 65850 SL001 | Alpha Wire | 4.85 $ | 1000 | CABLE 50COND 18AWG SLATE ... |
| 658564-1 | TE Connectiv... | 14.27 $ | 1000 | MESSER |
| 204-6585-00-0602J | 3M | 4.57 $ | 1000 | SOCKET LASER DIODE 4POS |
| PE-65853T | Pulse Electr... | -- | 1000 | COMMON MODE CHOKE 4LN SMD... |
| 203-6585-50-0602J | 3M | 4.31 $ | 1000 | SOCKET LASER DIODE 3POS |
| 658563-1 | TE Connectiv... | 21.96 $ | 1000 | UNTERLAGE K'P |
| PE-65854NL | Pulse Electr... | 3.31 $ | 565 | COMMON MODE CHOKE 4LN SMD... |
| PE-65854 | Pulse Electr... | 0.0 $ | 1000 | COMMON MODE CHOKE 4LN SMD... |
| PE-65857 | Pulse Electr... | 0.0 $ | 1000 | TRANSFORMERLine Common Mo... |
| PE-65855NLT | Pulse Electr... | -- | 1600 | COMMON MODE CHOKE 2LN SMD... |
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6585_2N4209 Datasheet/PDF