6585_2N4209 Allicdata Electronics
Allicdata Part #:

6585_2N4209-ND

Manufacturer Part#:

6585_2N4209

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP GENERAL PURPOSE
More Detail: Bipolar (BJT) Transistor PNP 15V 50mA 850MHz 300mW...
DataSheet: 6585_2N4209 datasheet6585_2N4209 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 1mA, 5V
Power - Max: 300mW
Frequency - Transition: 850MHz
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Description

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Introduction

The 6585_2N4209 is a bipolar junction transistor (BJT) device, a type of current-controlled electrical switch. This transistor consists of three distinct layers: a base layer sandwiched between two different elements called the emitter and the collector. BJTs are semiconductor devices, which are capable of operating as a switch, amplifier, and rectifier. In this article, we will discuss the application field and working principle of the 6585_2N4209.

Application field of 6585_2N4209

The 6585_2N4209 is suitable for use in various electrical applications, including digital electronics, audio effects, radio systems, power switching, and voltage regulation. It can be used as a switch in digital logic circuits and in audio amplifiers. It also finds application in radio frequency (RF) and microwave applications where it can support higher power levels than standard BJTs due to the higher gain of the 6585_2N4209.

Working Principle of 6585_2N4209

In a BJT device, a current is applied to the base layer, which induces a flow of electrons from the emitter to the collector. This action creates a lower voltage level on the base-to-emitter junction (called VBE) than what is found between the collector and the emitter (called VCE). The magnitude of the VCE can be adjusted by adjusting the amount of current flowing through the base layer. This is done by either increasing or decreasing the current applied to the base layer.

The 6585_2N4209 is an NPN device, which means that an N-type material (e.g., silicon) is used as the base layer and P-type materials (e.g., boron) are used as the emitter and collector layers. As the current flows through the base-emitter junction, it is amplified and this amplified current is transported to the collector. This device has a high current gain (hfe) which makes it suitable for use in high power applications.

The 6585_2N4209 is an NPN device, which means that an N-type material is used as the base layer and P-type materials are used as the emitter and collector layers. As the current flows through the base-emitter junction, it is amplified and this amplified current is transported to the collector. This device has a high current gain (hfe) which makes it suitable for use in high power applications.

Advantages of 6585_2N4209

The 6585_2N4209 offers several advantages in comparison to other transistors, such as low power consumption and high current gain. It is also very efficient at converting small signals into large ones, making it ideal for use in audio amplifiers and radio systems. Additionally, the 6585_2N4209 has a wide voltage range, which makes it suitable for use with a variety of voltages. The 6585_2N4209 is also relatively small in size, making it a good choice for tight spaces.

Conclusion

The 6585_2N4209 is a bipolar junction transistor (BJT) device, capable of operating as a switch or amplifier. It has a wide range of applications, from digital electronics to RF and microwave applications, and also possesses high current gain, low power consumption and a wide voltage range. It is an ideal choice for engineers who are looking for an efficient and reliable transistor.

The specific data is subject to PDF, and the above content is for reference

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