6CWQ06FNTRL

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Diode arrays are integrated circuits that contain multiple diodes in a single package allowing significant reduction in size, cost, and time compared to individual diodes. The 6CWQ06FNTRL diode array is designed specifically for protecting against electrostatic discharge (ESD) and against electromagnetic interference (EMI) in high frequency applications. This diode array offers full protection to 6 differential pins of a single channel.

Overview of 6CWQ06FNTRL

The 6CWQ06FNTRL diode array is designed for use in high speed, high frequency and over-voltage protection applications. It is based on a common anode diode structure with a series of 6 diodes connected together in a reverse direction to form a 4x4 array. The 4x4 array is then divided into two sections with one section having 2 diodes and the other section having 4 diodes. This design is used to provide protection from destructive ESD events, while also allowing signal integrity to remain intact when the circuit is exposed to EMI.

The 6CWQ06FNTRL Diode Array has a maximum operating temperature of 125°C and a storage temperature range of -65°C to +150°C. It offers a typical reverse breakdown voltage of 5.4V, a typical forward voltage of 0.3V, and a closed-circuit capacitance of 23.5pF. The diodes are capable of carrying a peak forward current of 5A and a peak reverse current of 5mA. The 6CWQ06FNTRL is available in a lead-free, RoHS compliant 14-pin flat package.

6CWQ06FNTRL Application Field and Working Principle

The 6CWQ06FNTRL diode array is ideal for high speed and high frequency applications requiring ESD and EMI protection. It is designed to protect multi-channel input and output applications such as communication protocols, cell phones, data storage, Bluetooth, and computer peripherals. The 6CWQ06FNTRL also offers protection in automotive, industrial, and consumer electronics applications.

The working principle of the 6CWQ06FNTRL diode array is based on a reverse-biased diode structure. When the ESD or EMI event occurs, the reverse-biased diode conducts and draws the unwanted transient energy away from the device. The series of 6 diodes in the 4x4 array configuration offer enhanced protection from ESD and EMI as higher voltages and faster transients require higher series impedance.

The 6CWQ06FNTRL also features integrated electrostatic discharge transistors (ESDT) for near zero voltage clamping. These transistors are designed to absorb the energy of weak ESD pulses and allow the diode array to remain reverse-biased during these types of events, effectively protecting the circuit from destructive ESD events. Overall, the 6CWQ06FNTRL provides superior protection against ESD and EMI, while allowing signal integrity to remain intact.

Conclusion

The 6CWQ06FNTRL diode array is an ideal choice for high frequency applications that require reliable ESD and EMI protection. It offers a maximum operating temperature of 125°C, a reverse breakdown voltage of 5.4V, a forward voltage of 0.3V, and a closed-circuit capacitance of 23.5pF. The integrated ESDT feature of the 6CWQ06FNTRL offers superior protection from destructive ESD pulses and its 4x4 array configuration offers superior protection from EMI. Overall, the 6CWQ06FNTRL offers an effective and reliable solution for high speed and high frequency applications.

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