7005L15J8

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Dual Port, Asynchronous
Memory Size:	64Kb (8K x 8)
Write Cycle Time - Word, Page:	15ns
Access Time:	15ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	68-LCC (J-Lead)
Supplier Device Package:	68-PLCC (24.21x24.21)
Base Part Number:	IDT7005

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Memory: 7005L15J8 Application Field and Working Principle

Memory chips are integrated circuits known as ICs (integrated circuits) that are used to store digital information in computers, laptops, phones, tablets, and other electronic devices. The 7005L15J8, also known as a static random access memory (SRAM) chip, is a type of memory used for data storage in various applications. This article will discuss the application field and working principle of the 7005L15J8.The 7005L15J8 is a 8 megabit SRAM chip developed by Micron Technology, a leading provider of memory solutions. It features an integrated 128K x 64K memory array and is used in applications that require large amounts of data storage, such as in gaming systems, telecom equipment, network switches, and other high-performance computing systems.The 7005L15J8 consists of an array of 8,192 storage cells organized into 128Kwords of 64-bit words, each cell storing one bit of digital information. A schematic of the SRAM cell is shown in Figure 1.

Figure 1. Schematic of SRAM cell.

The SRAM cell consists of four transistors, two load transistors, one write transistor and one read transistor. Data is written to the cell by turning on the write transistor, which applies a voltage to the storage node of the cell. Data that is already in the cell will be written over if the signal for writing is applied for long enough. For reading the data, the read transistor is turned on, allowing a voltage to be applied from the storage node to the output. The state of the cell, either a high voltage or a low voltage, will be applied at the output and defines the ‘0’ or ‘1’ bit of the stored data.The 7005L15J8, like all SRAMs, is fast and simple in operation, with a typical read latency of around 15ns. Although SRAMs are fast, they are much more expensive than dynamic RAMs (DRAMs) and have a much lower density, making them less ideal for applications that require large amounts of storage. Because of its fast access time, low power consumption and simple architecture, the 7005L15J8 is well-suited for a variety of applications that require data storage. One such application is in gaming systems, where the SRAM is used as the main storage system. The SRAM is fast enough to keep up with the high speed of the game, while also offering good power efficiency. It is also used in telecommunications equipment, where it is used as a buffer for items like call routing tables. Additionally, it is used in network switches and routers, where it is used to store data such as address tables and packet forwarding rules. The 7005L15J8 is also used in embedded systems, such as automotive applications, where it is used for data logging, collision detection, and as a buffer for buffering sensor data.In summary, the 7005L15J8 is a 8 megabit SRAM chip developed by Micron Technology and is used in a variety of applications that require data storage. It is ideal for gaming systems, telecom equipment, network switches, and other high-performance computing systems because of its fast access time, low power consumption and simple architecture. Its schematic diagram is shown in Figure 1 and it consists of an array of 8,192 storage cells organized into 128Kwords of 64-bit words, each cell storing one bit of digital information. The SRAM cell consists of four transistors, two load transistors, one write transistor and one read transistor. Data is written to and retrieved from the cell by applying a signal to the appropriate transistors.

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