7005L25JI8 Allicdata Electronics
Allicdata Part #:

7005L25JI8-ND

Manufacturer Part#:

7005L25JI8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 64K PARALLEL 68PLCC
More Detail: SRAM - Dual Port, Asynchronous Memory IC 64Kb (8K ...
DataSheet: 7005L25JI8 datasheet7005L25JI8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 64Kb (8K x 8)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 68-LCC (J-Lead)
Supplier Device Package: 68-PLCC (24.21x24.21)
Description

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Memory

The 7005L25JI8 is a type of memory technology that combines the speed and efficiency of a computer random-access memory (RAM) with the nonvolatility of other memories, such as flash and ROM. It is used in a variety of applications, including embedded systems, industrial computers, and automotive systems. This article will discuss the application fields and working principles of the 7005L25JI8.

Application Fields

The 7005L25JI8 memory technology is used in a wide variety of applications. It is often used in the embedded industry due to its ability to store and retrieve data quickly, its low power consumption, and its long write cycle time. Additionally, the 7005L25JI8 is often used in industrial computers because of its long life and durability. It is also used in automotive systems due to its ability to withstand temperature and humidity changes, as well as its high-performance and small size.

Working Principle

The 7005L25JI8 uses a unique type of circuit design that allows it to store data in a faster, more efficient way than other types of memory such as RAM. When the memory is powered up, the circuit passes electrical current through two tunneling junctions. The electrons then tunnel through the two junctions and are stored in one location. This means that the stored data can be accessed quickly as the electrons do not need to travel a long distance to get to the storage location.

When the data is needed, the electrical current passes through the same two tunneling junctions, which causes the electrons to tunnel in the opposite direction to the location where the data was stored. This means that the data can be accessed quickly as the electrons do not need to travel a long distance to get to the data location.

The 7005L25JI8 memory technology is a reliable and efficient way to store data. It has a long write cycle time, low power consumption, and is able to withstand temperature and humidity changes. Additionally, its circuit design allows it to access data quickly and efficiently.

The specific data is subject to PDF, and the above content is for reference

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