7005L55PF8 Allicdata Electronics
Allicdata Part #:

7005L55PF8-ND

Manufacturer Part#:

7005L55PF8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 64K PARALLEL 64TQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 64Kb (8K ...
DataSheet: 7005L55PF8 datasheet7005L55PF8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 64Kb (8K x 8)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (14x14)
Base Part Number: IDT7005
Description

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Memory - 7005L55PF8 Application Field and Working Principle

Memory is one of the most important components of computer technology and its associated application fields. The 7005L55PF8 is a type of non-volatile memory device, used for long-term storage of data. It has a wide application field and a unique working principle which makes it a valuable choice for certain computing requirements.

The application fields of the 7005L55PF8 include embedded systems, automotive applications, and specialized equipment that requires a long-term storage medium. The device is designed to be used in areas where the device will be subject to high temperatures, vibration, and physical damage, making it an ideal choice for some of the most demanding environments in which computing devices must perform.

The working principle of the 7005L55PF8 also makes it attractive to use in industrial applications and embedded systems. The device consists of a quasi-static random access memory (QSRAM) which is based on SRAM technology. QSRAM stands out from traditional SRAM in that it has a higher memory density, making it more efficient in terms of storage space and energy use. In addition, it offers improved reliability and enhanced failure protection. The result is a non-volatile, low-power memory device with excellent performance and competitive cost.

The 7005L55PF8 also has an active standby current of 2uA, which makes it energy efficient and cost effective. Its high write speed of up to 1.4Mhz ensures that the data can be stored quickly, allowing for faster retrieval of information. In addition, the device has a write endurance of 1000 cycles, ensuring that the device will last for a long time before it needs to be replaced.

The 7005L55PF8 also is designed to allow for parallel operations, making it possible to perform multiple operations in parallel. This allows for operations to be completed faster, while also providing greater data density and increased hardware performance. This makes it ideal for embedded applications, as well as industrial applications.

The 7005L55PF8 is an ideal solution for a wide range of embedded and industrial applications. Its non-volatile memory, high data density, and energy efficiency make it well suited for these types of applications. Its parallel operations and write endurance also make it an attractive choice for certain types of usage. Finally, its low cost and reliability are also desirable qualities that make it a good choice for many computing needs.

The specific data is subject to PDF, and the above content is for reference

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