7006L17G

The 7006L17G is a proprietary non-volatile memory device manufactured and marketed by a popular memory chips company. It is a type of electrically erasable programmable read–only memory (EEPROM), and is used for storing program ROM and data ROM.

The 7006L17G has a series of application fields, including automotive systems, consumer electronics, such as digital photography, digital video, audio systems, home theatre equipment, mobile phone and PDA, industrial control equipment, medical equipment, and networking and communication equipment, etc. It is well known for its low-power consumption, wide operating temperature range and high endurance which makes the 7006L17G suitable for in harsh outdoor environment.

The 7006L17G consists of a field oxide (FOX), an array of memory cells and a peripheral circuit. The array consists of 32,768 cells, arranged in 32 rows and 1024 columns in an 8 bit-per-cell configuration. Normally, the FOX serves as a border between the array and external circuit for noise reduction and isolation. The peripheral circuit is a combination of mode and command circuit, sense amplifier, level shifter, row decoder and a program circuit composed of write and erase circuitry.

The 7006L17G employs a single-level cell (SLC) structure which needs only one transistor to store one bit. A memory cell is linked to two gates (control gate and floating gate) by two tunnel junctions. The cell can be programmed by applying strongly negative voltage to its control gate. This voltage will be transferred to the floating gate through Fowler–Nordheim tunneling and induce trapped electrons on the floating gate. A sense amplifier is used to determine the voltage difference between the two gates. Once the trapped electrons on the floating gate reach the desired level, the cell will be regarded as programmed.

The 7006L17G also provides erase feature. In order to restore the cell, the electrons on the floating gate have to be removed by Fowler-Nordheim tunneling through a strong positive voltage application on the control gate with the maximum voltage of 16V. With this process, the 7006L17G\'s memory can be erased and rewritten at least 100,000 times.

In summary, the 7006L17G is a special memory device which provides great stability and reliability for its wide application range from consumer electronics to outdoor environment. The single-level cell (SLC) structure and dedicated programming and erasing circuitry enable the 7006L17G to provide fast and accurate read and write operations with lowest possible power.