Allicdata Part #: | 7006L55FB-ND |
Manufacturer Part#: |
7006L55FB |
Price: | $ 265.34 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC SRAM 128K PARALLEL 68FPACK |
More Detail: | SRAM - Dual Port, Asynchronous Memory IC 128Kb (16... |
DataSheet: | 7006L55FB Datasheet/PDF |
Quantity: | 1000 |
27 +: | $ 241.21700 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Asynchronous |
Memory Size: | 128Kb (16K x 8) |
Write Cycle Time - Word, Page: | 55ns |
Access Time: | 55ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | -55°C ~ 125°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 68-Flatpack |
Supplier Device Package: | 68-FPACK |
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The purpose of this article is to discuss the application field and working principle of 7006L55FB memory. Memory is an important component of computers and electronic products, and 7006L55FB memory is a type of memory commonly used in modern electronic products. This article will discuss its application field as well as its working principle in detail.
To begin with, 7006L55FB memory is a type of flash RAM developed by Samsung. It is based on the NAND flash technology which applies the same logic gates as used in traditional ROMs, but with a much higher memory density. This makes the 7006L55FB memory the perfect choice for high-density data storage applications.
As for its application field, 7006L55FB memory is mainly used for digital devices such as mobile phones, cameras, video game consoles, and digital audio players. This type of memory has high read and write speeds, making it ideal for storing large amounts of data. In addition, 7006L55FB memory can also be used in industrial control applications where data input and output need to be processed quickly and accurately.
In terms of the working principle of 7006L55FB memory, it utilizes a basic NAND flash architecture. NAND flash memory is based on the concept that each memory cell is composed of one single transistor and one single storage element. The storage element is designed to store either one bit or two bits of data depending on the type of memory. This means that a single cell can store one bit or two bits of information. This makes the 7006L55FB memory very efficient in terms of data storage.
Each memory cell is based on a common circuit layout that consists of two data lines (input and output) and one control line. To read a cell, the voltage applied to the control line is first set and then the input and output data lines are sampled to determine the value stored on the cell. To write a cell, the data that is to be stored is first applied on the input data line and then the control line is set to write the data to the cell. The 7006L55FB memory is able to store data quickly and reliably because of these steps.
In conclusion, the 7006L55FB memory is a type of flash memory developed by Samsung for use in modern digital devices. It has a high memory density and is able to quickly and accurately store data. The working principle of the 7006L55FB memory is based on a simple NAND flash architecture consisting of two data lines and one control line. This makes it an efficient and reliable way to store data.
The specific data is subject to PDF, and the above content is for reference
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