Allicdata Part #: | 7006S55PFI-ND |
Manufacturer Part#: |
7006S55PFI |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC SRAM 128K PARALLEL 64TQFP |
More Detail: | SRAM - Dual Port, Asynchronous Memory IC 128Kb (16... |
DataSheet: | 7006S55PFI Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Asynchronous |
Memory Size: | 128Kb (16K x 8) |
Write Cycle Time - Word, Page: | 55ns |
Access Time: | 55ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 64-LQFP |
Supplier Device Package: | 64-TQFP (14x14) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory technology has seen remarkable development in recent years, in both speed and capacity. Along with this development, new forms of memory have emerged such as Flash, SRAM, DRAM, NVRAM and more. One of the latest developments is the 7006S55PFI. This technology offers non-volatile and fast data storage, and is designed for specific applications.
The 7006S55PFI’s chief application is in industrial systems that require a high degree of reliability for a variety of operations. This includes the automotive, aviation, and security industries. The flexibility of the 7006S55PFI allows for storage of a wide variety of data elements such as voice, images, and videos. It is also capable of storing data from sensors and other devices.
The 7006S55PFI is based on a non-volatile memory cell that includes a two transistor memory element. This device is based on a standard DRAM structure with a symmetrical structure, allowing for high reliability. Data is written and read using an on-chip timing circuit and precharge circuitry, with a latency of 2.5 and 4.5ns, respectively.
The 7006S55PFI was designed to be used in applications that require a higher level of reliability than standard Flash technology. The device is equipped with automatic error correction and advanced system error detection, allowing it to correct data as it is stored. This ensures that data integrity is preserved, even in the event of a power or other system failure.
In addition, the 7006S55PFI has a regenerative write process that eliminates the need for a redundant write cycle. This eliminates the possibility of data corruption during sudden power outages or system errors. The device also includes an extensive range of advanced features, such as temperature and voltage monitoring, to protect the stored data.
The 7006S55PFI also offers a high degree of flexibility in system design. The device can be programmed for various data types and data formats, allowing for compatibility with software applications and custom hardware configurations. This allows for a variety of applications within different industries, from automotive and medical to security and aerospace.
Overall, the 7006S55PFI is a versatile memory technology that offers a high degree of reliability and flexibility. Its small physical size and low power consumption make it well suited to a variety of applications. The technology is designed for systems that require reliability and longevity, with features such as temperature and voltage monitoring, data integrity verification, and regenerative write cycles to ensure data accuracy is maintained even in extreme conditions.
The specific data is subject to PDF, and the above content is for reference
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