7006L35J Allicdata Electronics
Allicdata Part #:

7006L35J-ND

Manufacturer Part#:

7006L35J

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 128K PARALLEL 68PLCC
More Detail: SRAM - Dual Port, Asynchronous Memory IC 128Kb (16...
DataSheet: 7006L35J datasheet7006L35J Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kb (16K x 8)
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 68-LCC (J-Lead)
Supplier Device Package: 68-PLCC (24.21x24.21)
Base Part Number: IDT7006
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 7006L35J is a type of memory that has various applications and a unique working principle. Memory, generally speaking, is an electronic component used to store information and data for a certain amount of time. This component, in particular, is a type of dynamic random access memory (DRAM). It is a high-speed and low-power solution for applications requiring large , high-density memory.

The 7006L35J has a wide variety of applications. Its potential applications range from mobile phones and personal digital assistance (PDAs) to data storage devices and imaging systems. Its stable performance and low-power consumption make it an ideal choice for these types of devices as it does not require significant resources or custom designs. It can also be used for gaming consoles and virtually any other electronic product that requires high-speed storage.

The 7006L35J’s unique working principle is based on the idea of storing information in capacitors by charging them up and then draining the charge. This is accomplished by the use of transistors and is known as a “destructive read-out” technique due to the capacitor losing its charge after each read. However, the transistors and capacitors within the 7006L35J use very low power, which minimizes the amount of energy that is expended each time the information within the component needs to be updated.

The 7006L35J is an excellent choice for any application that makes use of DRAM technology, as its low power consumption and high-speed performance make it the ideal solution. Furthermore, with its wide range of applications, from PDAs to gaming consoles, this component is sure to meet the needs of any system or device. So, if you’re looking for a reliable, high-performance solution for your memory needs, the 7006L35J is the perfect choice.

The specific data is subject to PDF, and the above content is for reference

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