
Allicdata Part #: | 7007L15J8-ND |
Manufacturer Part#: |
7007L15J8 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC SRAM 256K PARALLEL 68PLCC |
More Detail: | SRAM - Dual Port, Asynchronous Memory IC 256Kb (32... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Asynchronous |
Memory Size: | 256Kb (32K x 8) |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 15ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 68-LCC (J-Lead) |
Supplier Device Package: | 68-PLCC (24.21x24.21) |
Base Part Number: | IDT7007 |
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Memory
The 7007L15J8 is a robust, versatile and highly reliable Static Random Access Memory (SRAM). It is widely used in a broad range of applications due its exceptional characteristics.
Application Fields
This range of SRAMs is an ideal solution for applications where storage space efficiency, cost effectiveness and performance are required. This type of memory is perfect for applications where low power is a requirement, such as battery powered devices. It can also be used for embedded systems, flash microcontrollers, telecommunications infrastructure and consumer electronics.
The 7007L15J8 SRAM is widely used in industrial automation and control, as well as in medical instrumentation, imaging and sensing needs. This is because of its broad range of features which make it highly reliable and well suited for a broad range of applications. Additionally, its high operational speed, low voltage operation and low power consumption make it a versatile, cost-effective and reliable memory solution.
Working Principle
The SRAM is a type of memory that can be either volatile or non-volatile. The 7007L15J8 SRAM is a static random access memory, which is non-volatile and holds its data without needing a power supply or any other type of supporting device. This is because the data is stored in a static arrangement, meaning that it does not depend on external intervention to maintain or refresh the data.
The SRAM uses a bit cell for the data storage. Each bit cell contains a differential pair of transistors, which are the basic storage unit. A bit is stored by powering the two transistors in the bit cell in different ways. If the transistors are powered in an inverse manner, the bit of data is ‘1’, while if they are powered in a similar way, the bit of data is ‘0’.
The SRAM also utilizes a latching circuit, which ensures that all cells are constantly monitored and their data is accurately stored. The SRAM then uses a word line to read the data stored in each cell. This word line is energized when the data is being read, which results in a voltage differential being applied to the two transistors. The voltage differential then causes the current to flow and the bit to be read.
The 7007L15J8 SRAM is ideal for a wide range of applications due to its outstanding features. Its quick access times, wide temperature range and low power consumption make it an excellent solution for multiple applications. Furthermore, its non-volatile memory characteristics ensure that data is not lost in cases of power failure or other unexpected events.
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