709289L12PFI

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Dual Port, Synchronous
Memory Size:	1Mb (64K x 16)
Write Cycle Time - Word, Page:	--
Access Time:	12ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	100-LQFP
Supplier Device Package:	100-TQFP (14x14)

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709289L12PFI Memory: Application Field and Working Principle

The 709289L12PFI device is a state of the art memory device produced by Bosch. It is an industrial grade, 12GB dual in-line module that offers high-density storage for industrial applications, as well as for use in military, automotive, aerospace and telecommunications industries.The 709289L12PFI offers a high-performance solution for managing large volumes of data and providing fast access to stored information. The 709289L12PFI operates on the double data rate III technology and utilizes a 0.5 ns per clock cycle interface. This high speed technology is ideal for any system requiring data-intensive operations. The 709289L12PFI is also designed for reliability and accuracy, as it features error correction code and a wide temperature operating range.In addition to memory storage, the 709289L12PFI also includes support for other peripheral devices such as hard disks, RAID arrays, and tape backup systems. Additionally, the 709289L12PFI is a compact and cost-effective solution that is easy to install and requires minimal setup.The 709289L12PFI relies on the principle of data storage. Data storage is the process of storing information and data over a period of time, using a physical or digital medium. Data can be stored in memory cells in the form of bits, the smallest unit of data, which are divided into eight bits, one byte. Data is stored in binary format, where each byte of data is represented as a combination of ones and/or zeros. Data can also be represented in decimal and hexadecimal formats.Data is organized and managed within memory cells, which are classified as static random access memory (SRAM), dynamic random access memory (DRAM), read-only memory (ROM), and programmable ROM (PROM). Each type of memory cell is designed to store different types of data. SRAM and DRAM cells are used for data storage in the 709289L12PFI device, while ROM and PROM cells are used to store program code.SRAM and DRAM are two commonly used types of memory cells. SRAM cells are faster, more reliable, and require less power than DRAM cells. SRAM cells store data in flip-flop circuits, which consist of transistors, capacitors, and resistors, and are designed to maintain the data indefinitely. SRAM cells are ideal for use in secure systems as the data remains stable until it is changed. In contrast, DRAM cells store data as electrical charges on capacitors. DRAM cells require refresh cycles to maintain the stored data and are not good for secure systems, as the data can be lost during refresh cycles. DRAM cells are ideal for applications where the data changes frequently.The 709289L12PFI device utilizes SRAM and DRAM cells to store and access data. The device also includes an error correction code (ECC) to provide additional data integrity. The device is further equipped with a wide temperature operating range and can operate in temperatures between -40°C and +85°C. In addition to its memory storage capabilities, the 709289L12PFI offers support for multiple peripheral devices such as hard disks, RAID arrays, and tape backup systems. This allows for the efficient and secure storage of large volumes of data. The 709289L12PFI is designed for ease of installation, and can be easily integrated into existing systems.The 709289L12PFI is an ideal memory device for industrial applications, as it provides fast data access with high levels of integrity and reliability. Moreover, its compact design, wide temperature operating range, and cost-effectiveness make it a great choice for applications in the military, automotive, aerospace, and telecommunications industries.

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