70P259L90BYGI8 Allicdata Electronics
Allicdata Part #:

70P259L90BYGI8-ND

Manufacturer Part#:

70P259L90BYGI8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 128K PARALLEL 100CABGA
More Detail: SRAM - Dual Port, Asynchronous Memory IC 128Kb (8K...
DataSheet: 70P259L90BYGI8 datasheet70P259L90BYGI8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kb (8K x 16)
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-TFBGA
Supplier Device Package: 100-CABGA (6x6)
Description

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The P259L90BYGI8 memory is a complex device used in a variety applications. It is based on a flash storage architecture which uses microscopic silicon chips to store enormous amounts of data. This device features a fast read/write speed and is capable of storing over 10 times the data of its predecessors.

The P259L90BYGI8 memory is designed to store data which is accessed quickly and repeatedly. It is often used in devices such as digital cameras, flash drives and portable music players as well as in tablets and smartphones. As these devices become increasingly popular, the demand of the P259L90BYGI8 memory has increased significantly, as these devices need a high capacity storage solution.

The P259L90BYGI8 memory is a non-volatile memory, meaning that the data stored in it is not lost when the device loses power. This is important for mobile devices where a battery may die or it may be disconnected from a power source for extended periods. This feature allows device developers to be confident that the data stored on their device will remain intact.

The P259L90BYGI8 memory has a number of advantages over traditional mechanical hard drives, including a faster read/write speed and a longer life span. It is also more resistant to shocks and vibration than traditional hard disks, which can be a major factor in the development of mobile devices. The P259L90BYGI8 memory is also more energy efficient, which can be an important factor in the development of mobile devices.

The P259L90BYGI8 memory is based on a flash memory architecture which uses microscopic silicon chips to store data. The chips are arranged in a specific pattern and the data is stored on the chips in tiny squared areas which are called cells. These cells are then grouped together into what is known as a page and up to 4 pages are arranged into a block. As data is written to the P259L90BYGI8 memory, it is written to the page and then to the block in a specific order, with each page being written to a separate chip. The order that data is written in is very important and must be followed in order for the device to operate correctly. The data is then read in the same order as it was written, with all the data in a single page being read before moving to the next.

The P259L90BYGI8 memory is designed to provide an efficient and reliable storage solution for a number of applications. Its advantages over traditional hard disks makes it an ideal choice for device developers, who often require a high capacity storage solution with a fast read/write speed and longer life span. As mobile devices become increasingly popular, the P259L90BYGI8 memory will become more and more important for data storage solutions.

The specific data is subject to PDF, and the above content is for reference

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