Allicdata Part #: | 70V05L25PF-ND |
Manufacturer Part#: |
70V05L25PF |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC SRAM 64K PARALLEL 64TQFP |
More Detail: | SRAM - Dual Port, Asynchronous Memory IC 64Kb (8K ... |
DataSheet: | 70V05L25PF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Asynchronous |
Memory Size: | 64Kb (8K x 8) |
Write Cycle Time - Word, Page: | 25ns |
Access Time: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 64-LQFP |
Supplier Device Package: | 64-TQFP (14x14) |
Base Part Number: | IDT70V05 |
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Memory is a central component of all computer systems, providing storage for short-term, intermediate and long-term data storage. 70V05L25PF is a type of flash memory that provides both long-term storage and short-term data storage. Flash memory is usually embedded in solid state drives (SSDs), USB flash drives, and memory cards. As an example, the 70V05L25PF can be found in hard disk drives, video recorders, digital cameras and any other device that requires a large amount of data storage.
The 70V05L25PF is a type of non-volatile memory, meaning that information stored will not be lost if power is unexpectedly lost. 70V05L25PF consists of a monolithic array of cells, each containing a floating-gate transistor. Such a technology was developed prior to 70V05L25PF. This type of transistor technology works by trapping electrons in the channel between the source and the drain. This is done by using a thin oxide layer which acts as a barrier, preventing the electrons from escaping.
In terms of its application fields, 70V05L25PF is often used in consumer electronic applications such as USB flash drives, digital cameras, camcorders, personal digital assistants (PDAs) and mobile phones. It is also used in microcontroller-based applications for embedded systems and for industrial-grade equipment. Additionally, it is often used in embedded systems for communication purposes.
In terms of its working principle, the 70V05L25PF relies on the tunnel injection to inject electrons into the floating gate. This is considered to be a very efficient process as it requires less power to operate compared to other memory technologies. With the 70V05L25PF, the electrons are trapped in the intermediate region, resulting in a state of enhanced electrical insulation. This is the primary principle of operation for this type of flash memory.
Once the electrons have been trapped in the intermediate region, they are able to remain in this state without the need for a power source. This is due to the presence of the oxide layer which acts as a barrier, preventing the electrons from escaping. Additionally, because this technology is based on the charge-stored principle, it ensures that data written to the 70V05L25PF will be retained when the power is removed.
In summary, the 70V05L25PF is a type of non-volatile memory that uses the charge-stored principle to store and retrieve data. Its main application fields include consumer electronics, embedded systems for communication and industrial-grade equipment. Its main working principle relies on the tunnel injection to inject electrons into the floating gate, which is then stored in the intermediate region.
The specific data is subject to PDF, and the above content is for reference
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