70V08L35PF Allicdata Electronics
Allicdata Part #:

70V08L35PF-ND

Manufacturer Part#:

70V08L35PF

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 512K PARALLEL 100TQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 512Kb (64...
DataSheet: 70V08L35PF datasheet70V08L35PF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 512Kb (64K x 8)
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)
Base Part Number: IDT70V08
Description

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The 70V08L35PF memory is a kind of nonvolatile flash memory characterized by one-time programmability, high density and low voltage protection. It is a cost-effective, highly integrated and secure solution for a variety of applications.

Application Field

The 70V08L35PF memory is commonly used in embedded systems and small consumer applications requiring secure storage. It is ideal for applications such as smart cards, set-top boxes, mobile phone accessories, gaming devices, industrial control systems and automotive electronics.

The 70V08L35PF memory is also well-suited for applications that require low-cost storage and require a small footprint. Examples include data storage devices, code storage, security keys, authentication modules, and authentication storage.

Working Principle

The 70V08L35PF memory is composed of four integrated components: a control logic, a 16-bit data bus, a mask ROM, and a floating-gate access transistor. When data is written to the memory, it is first written to the control logic, which determines the address of the memory cell to write the data to. The data is then written to the data bus and stored in the mask ROM. The data is then written to the cell by applying a source voltage to the access transistor.

In order to protect the memory, the 70V08L35PF memory offers protection against accidental power outages and unexpected voltage spikes. The memory also supports on-die error correction, allowing it to be used in applications where reliable data storage is essential.

The 70V08L35PF memory is a versatile and reliable solutions for a wide range of memory applications. Its high density, low power requirements, and security features make it suitable for numerous applications across a range of industries.

The specific data is subject to PDF, and the above content is for reference

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