70V08S35PF Allicdata Electronics
Allicdata Part #:

70V08S35PF-ND

Manufacturer Part#:

70V08S35PF

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 512K PARALLEL 100TQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 512Kb (64...
DataSheet: 70V08S35PF datasheet70V08S35PF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 512Kb (64K x 8)
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)
Base Part Number: IDT70V08
Description

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Introduction of 70V08S35PF Memory

The 70V08S35PF Memory is a type of memory used in various digital circuits and systems. It is a flash non-volatile memory, designed as an 8-bit wide common memory device. It is widely used in embedded applications, such as digital cameras and personal digital assistants.

Application Field of 70V08S35PF Memory

The 70V08S35PF Memory is an ideal choice for applications such as data logging, program storage, identification systems, and password set-up.

It is suitable for applications that require high performance and high density, such as in medical equipment, domestic appliances, telecommunications, portable electronic devices, and automotive systems.

The device has a temperature operating range of -40℃ to +85℃, making it suitable for use in a wide range of ambient temperatures. It is also available with features such as an ECC (Error Correction Code) to ensure data integrity and reliability.

The device offers the benefits of low power consumption and long data retention, making it suitable for long-term storage of data.

Working Principle of 70V08S35PF Memory

The 70V08S35PF Memory operates through a process called flash programming. In this process, the memory is programmed by the host controller, which sends programming pulses to the memory device. These pulses cause a charge to be stored in a specific cell on the chip.

When the host controller needs to access data stored in the memory, it sends a read pulse to the device. This read pulse causes the stored charge to be released, resulting in a voltage that is proportional to the charge stored in the cell.

The signal is then converted into a digital value, allowing the controller to access the data stored in the memory device. Data can be written to and read from the memory device with the help of special commands.

The 70V08S35PF Memory is also able to enter in to deep power down mode, providing additional power conservation when not required.

Conclusion

The 70V08S35PF Memory is a compact and feature-rich memory solution for a wide range of applications. It has a wide temperature range, low power consumption, and long data retention, making it an ideal choice for embedded applications. The memory device operates by using flash programming, allowing for the efficient storage and retrieval of data.

The specific data is subject to PDF, and the above content is for reference

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