70V631S10BC Allicdata Electronics
Allicdata Part #:

800-2314-ND

Manufacturer Part#:

70V631S10BC

Price: $ 85.34
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4.5M PARALLEL 256CABGA
More Detail: SRAM - Dual Port, Asynchronous Memory IC 4.5Mb (25...
DataSheet: 70V631S10BC datasheet70V631S10BC Datasheet/PDF
Quantity: 1000
12 +: $ 77.57540
Stock 1000Can Ship Immediately
$ 85.34
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 4.5Mb (256K x 18)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)
Base Part Number: IDT70V631
Description

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70V631S10BC is an integrated circuit memory device manufactured by Winbond. It has a vast range of applications and is used in a variety of electronic devices, from computers, servers and networking equipment to consumer electronics, digital cameras and game consoles. The device is a static RAM (SRAM) memory, which has a high speed access time and low power consumption.

The 70V631S10BC is a synchronous SRAM, which features extended endurance and reliability. The device provides a synchronous interface, which allows for the clocking of control and address information to control the device. The interface also allows for the synchronization of data on both the rising and falling edges of a clock signal.

The 70V631S10BC has a memory capacity of 6Mb (million bits), which is equal to 768Kb (thousand bits) of storage. This capacity allows for large-scale data storage in applications such as high-speed data analysis, data buffering and multimedia applications. The device is also capable of storing multiple data streams simultaneously and is able to access them in real-time.

The 70V631S10BC is organized as one bank of 16,384 words of 8-bits each. The device has five selectable CAS Latency cycles and supports burst operations. It has multiple internal registers for configuration and control. The device is also capable of pipelined burst addressing and features two chip enable pins for increased flexibility.

The 70V631S10BC also has a wide operating temperature range from -40C to 85C and an extended operating voltage range from 1.8V to 2.5V. The device also has multiple internal low-voltage detection circuits, which allow it to be used in low voltage applications. The device also features data protection and error detection features such as read/write parity and error-correcting codes, which are useful in mission-critical applications.

The 70V631S10BC has low power consumption and produces low noise emissions. The device has a self-refresh mechanism which eliminates the need for external refresh-circuitry, thus saving power and reducing system noise. The device is packaged in a 44-pin Thin Small-Outline package (TSOP-44), which allows for very small and compact design of the system.

The 70V631S10BC has a wide range of applications in the consumer electronics, networking, telecommunications and industrial automation industries. It is used in a variety of devices such as access points, routers, hubs, switches and digital media players. It is also used in applications such as high-definition video decoding and encoding, compression/decompression and digital signal processing.

The 70V631S10BC is a highly versatile and reliable SRAM device offering a wide range of features and applications. It is capable of providing high-performance memory for large-scale data storage and processing applications and offers improved energy efficiency, enhanced data protection and reliable operation over a wide range of environmental conditions.

The specific data is subject to PDF, and the above content is for reference

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