70V639S12BFGI8

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Dual Port, Asynchronous
Memory Size:	2.25Mb (128K x 18)
Write Cycle Time - Word, Page:	12ns
Access Time:	12ns
Memory Interface:	Parallel
Voltage - Supply:	3.15 V ~ 3.45 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	208-LFBGA
Supplier Device Package:	208-FPBGA (15x15)
Base Part Number:	IDT70V639

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Introduction to 70V639S12BFGI8 Memory

70V639S12BFGI8 memory belongs to static random access memory (SRAM). Its development objective is high-speed compatibility, allowing users to concentrate data quickly. 70V639S12BFGI8 memory can store data and instructions, providing a powerful backup to central processing unit (CPU). It mainly consists of transistors and capacitors, and its design is based on a regular grid of MOSFETs (metal oxide semiconductor field-effect transistors).70V639S12BFGI8 memory is widely used for applications such as high-performance computer (HPC) designs, multi-threaded processors, and network-centric microprocessors.

Application of 70V639S12BFGI8 Memory

70V639S12BFGI8 memory is an ideal memory product for high-performance computing. It can cope with data access of various sizes and provides fast access speed to ensure that data is delivered as quickly as possible, meeting the requirements for ultra-short latency.70V639S12BFGI8 memory can also be used in customer-oriented equipment such as anti-virus security devices, microwave stations, and unmanned aerial vehicles (UAVs). These customer-oriented equipment mainly require real-time operations and control. With the help of 70V639S12BFGI8 memory, they can responsively respond to data input and connect the data between the layers.In addition, 70V639S12BFGI8 memory is widely used in game consoles, digital video recorders, and handheld gaming and multimedia devices. Unlike other memory components, it provides superior performance for high-end gaming and consumer applications.

Working Principle of 70V639S12BFGI8 Memory

70V639S12BFGI8 memory is based on MOSFETs, which are MOSFETs that form a regular array, typically 2M by 4N (M is the number of rows and N is the number of columns). Each MOSFET is connected to two capacitors, one for storing the charge and the other for reading it. When the MOSFET is switched on, it enables current to flow between the capacitors, which determines the state of the memory cell.It is composed of a six-transistor SRAM logic cell, which is selected by a decoder that distributes address lines to the cell array. In a typical 70V639S12BFGI8 memory, the read access time (tAC) and the write access time (tWC) are 10ns and 10ns, respectively. This is significantly faster than the read and write times of other types of memory.In addition, 70V639S12BFGI8 memory is designed with power-saving technology, which reduces power consumption and improves storage stability. With the help of advanced power control technology, it is able to reduce energy consumption from an average of several mW to less than 1 mW.In summary, 70V639S12BFGI8 memory is a type of static random access memory that provides speedy data transfer and power-saving capabilities. Its application includes HPC designs, multi-threaded processors, customer-oriented equipment, game consoles, digital video recorders, and handheld gaming and multimedia devices. Its working principle lies in its six-transistor SRAM logic cells being selected with the help of a decoder. Its fast access speeds enable it to quickly deliver data, while its power-saving features make it an ideal choice for a wide range of applications.

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