Allicdata Part #: | 70V631S12BFGI-ND |
Manufacturer Part#: |
70V631S12BFGI |
Price: | $ 89.39 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC SRAM 4.5M PARALLEL 208FPBGA |
More Detail: | SRAM - Dual Port, Asynchronous Memory IC 4.5Mb (25... |
DataSheet: | 70V631S12BFGI Datasheet/PDF |
Quantity: | 1000 |
14 +: | $ 81.26650 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Asynchronous |
Memory Size: | 4.5Mb (256K x 18) |
Write Cycle Time - Word, Page: | 12ns |
Access Time: | 12ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3.15 V ~ 3.45 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 208-LFBGA |
Supplier Device Package: | 208-FPBGA (15x15) |
Base Part Number: | IDT70V631 |
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Memory is a type of device that can store data and retrieve it for further use. It is used for storing and running applications, as well as for data input/output and other data processing operations. One such kind of memory is the 70V631S12BFGI, which is a low voltage static random access memory (SRAM).
Application Field
The 70V631S12BFGI is commonly used in applications such as telecommunications, consumer electronics, industrial automation, and medical electronics. It is best suited for applications with low power and low area requirements.
It is widely used in space-constrained applications due to its low voltage operation, which requires less power, and it is also suitable for other battery-based applications such as mobile or portable devices. Additionally, it is used in applications where multiple interruptions from power sources can occur, such as in adverse environmental conditions, since it can retain data for extended periods of time.
Working Principle
The 70V631S12BFGI is a dual-port SRAM, which means that it can receive two write/read commands simultaneously. The basic operation of the 70V631S12BFGI is as follows:
A write command is sent to the memory chip by an external device, such as a microcontroller. This command contains the address of the memory location, the data to be written, and the write enable signal. The external device then sends a read command. This command consists of the address of the data to be read and the read enable signal. The memory chip then returns the data that was requested.
The advantage of the 70V631S12BFGI is its burst read/write operation. Data can be transmitted in a continuous stream, saving time and effort. This is especially useful in applications such as video processing or telecommunication, where quick access and transmission of large amounts of data is essential.
The 70V631S12BFGI is designed for power-efficient operation, consuming only 33 mW in active mode and a mere 0.1 μW in standby mode for low voltage operation.
Conclusion
The 70V631S12BFGI is a versatile low voltage SRAM ideal for use in space-constrained applications, where prolonged battery life is needed, and in applications where multiple interruptions from power sources can occur. Its burst read/write operation provides fast, efficient data access and transmission, while its low power and low area requirements make it greatly suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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