70V7519S133BC

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory components are vital components of any computer system, as they are used to store data. The 70V7519S133BC is a type of memory device that is used in a wide variety of applications. This article will provide an overview of the 70V7519S133BC memory device, its application field and its working principle.

Overview of the 70V7519S133BC

The 70V7519S133BC is a 128-MBit synchronous DRAM memory device. It is constructed with advanced 180-nanometer (nm) lithography and CMOS process technology, and it is designed for applications that require high performance, low power consumption, and high density memory. This memory device has a high-speed data transfer rate of up to 266 MHz, low power operation of 2.0 V to 3.3 V, and a small package size of 66-ball FBGA. This memory device also offers error-correcting codes (ECC) support.

Application Field of the 70V7519S133BC

The 70V7519S133BC memory device is used in a variety of applications, including industrial, embedded, consumer, network and server systems. It is suitable for use in applications that need high-density memory such as digital signage, avionics, medical imaging, automotive, gaming and multimedia. This memory device provides significant performance and power-savings benefits in comparison to other memory devices, and it is also compliant with JEDEC standards.

Working Principle of the 70V7519S133BC

The 70V7519S133BC offers two types of burst access: linear and interleaved. Linear bursts enable data access from the same memory address, while interleaved bursts enable data access from multiple memory addresses. Both types of burst access allow faster data transfer with less power consumption. This memory device can also offer a self-refresh operation to reduce power consumption, and it has the ability to configure the DRAM array in different configurations, such as x8, x16, or x32.

This memory device also has a self-timed row precharge feature that enables it to precharge the row of data during the read/write cycle. It also has an auto-refresh feature, which enables it to refresh the memory contents at regular intervals. This memory device also features on-die ECC and parity checking, which offers enhanced data integrity and reliability.

Conclusion

The 70V7519S133BC is a high-performance, low power, high-density memory device that is suitable for use in a number of applications. It offers a wide range of features, such as linear and interleaved burst access, self-refresh and auto-refresh operations, and ECC and parity checking. This memory device is compliant with JEDEC standards, and it offers significant performance and power-savings benefits over other memory devices.

The specific data is subject to PDF, and the above content is for reference