70V7339S133BF8

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Memory is an important component for the functioning of digital systems, so accurate and stable memory products with long life cycles are essential for applications. 70V7339S133BF8 is an advanced dual-channel Bootstrapped latch-based registered dual port SRAM from Huali Microelectronics which combines flexibility, superior performance, and environmental sustainability simultaneously. It is suitable for a wide range of applications from devices requiring large amounts of data storage to memories operated in low-power and high-speed situations.

70V7339S133BF8 is a high performance memory device featuring a 1.33 GHz clock rate, a 130 MHz burst rate, and dual clock latency to maximize performance. This device supports a maximum burst length of 16, low static power consumption of 0.45 W (maximum) and maximum density of 8 GBytes per module. Its dual clock latency allows for faster access times than traditional SRAMs and also eliminates continuous refreshes.

The 70V7339S133BF8 is a Bootstrapped latch-based registered dual port SRAM that provides predictable performance in volatile and non-volatile memory designs. The Bootstrapped latch-based architecture provides better performance sequencing and a greater operational frequency range than traditional SRAMs. This type of SRAM utilizes a handshake protocol to ensure reliable and consistent operation, allowing for faster access times, lower voltage, and faster operation than traditional SRAMs.

In addition to its high-performance feature set and operating frequency, the 70V7339S133BF8 also brings together environmentally-friendly solutions. The device supports 1.8V and 2.5V properties, thereby delivering greater power efficiency, and even has low power consumption shut down mode and an Industry 4.0 ready serial bus interface. The combination of these features allows customers to reduce their costs and power consumption for long-term use.

One of the most important features of the 70V7339S133BF8 is its ability to be used in a wide range of applications. It can be used in high-end workstations and servers for graphics processing, as well as for machine control and communications. It is also suitable for connected devices and to support energy efficient solutions in Industrial Internet of Things. As such, 70V7339S133BF8 provides a flexible and reliable solution for many applications.

The working principle of 70V7339S133BF8 is that it utilizes a latch-based architecture along with a handshake protocol to minimize latency and provide maximum performance. This eliminates refresh cycles and allows the device to read and write faster than traditional SRAM solutions. This device also includes dual clock latency, allowing for lower voltage and faster operation. The device supports a maximum burst length of 16, low static power consumption of 0.45 W (maximum), and has a maximum density of 8 GBytes per module. This ensures faster access times and data processing for customers who require large amounts of data storage.

In conclusion, the 70V7339S133BF8 from Huali Microelectronics is an advanced dual-channel Bootstrapped latch-based registered dual port SRAM. This device features a 1.33 GHz clock rate, a 130 MHz burst rate, dual clock latency, low static power consumption, and Industry 4.0 ready serial bus interface. It is suitable for a wide range of applications from devices requiring large amounts of data storage to memories operated in low-power and high-speed situations. This device has a latch-based architecture along with a handshake protocol to minimize latency and provide maximum performance, making it an ideal solution for a wide array of applications.

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