70V9079L7PF8 Allicdata Electronics
Allicdata Part #:

70V9079L7PF8-ND

Manufacturer Part#:

70V9079L7PF8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 256K PARALLEL 100TQFP
More Detail: SRAM - Dual Port, Synchronous Memory IC 256Kb (32K...
DataSheet: 70V9079L7PF8 datasheet70V9079L7PF8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: --
Access Time: 7.5ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)
Base Part Number: IDT70V9079
Description

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Memory devices are the fundamental components of digital systems and are used for a variety of tasks. The 70V9079L7PF8 is an advanced memory device that offers exceptional performance for digital storage and retrieval applications. This memory device is based on an advanced and reliable technology called Floating Gate MOSFET. It utilizes microscopic layers of material to create cells that store data bits.

The 70V9079L7PF8 is a highly advanced memory device that offers many benefits over traditional memory devices. It offers excellent power efficiency and is capable of storing up to 4GB of data. This device has a number of advanced features including fast access times, low power requirements and very low power consumption. The device also provides a high level of data integrity and reliability. The device is designed to work effectively with a wide range of operating systems and applications.

The 70V9079L7PF8 has a number of different applications in various environment. This device can be used for storage and retrieval of data in a large variety of applications. It can be used in data storage and recovery applications, as well as for booting up devices. It is also used in servers for data storage applications. This device is also used in consumer electronics to store data in digital devices and gaming consoles.

The working principle of the 70V9079L7PF8 is based on a technology known as Floating Gate MOSFET. This technology utilizes microscopic layers of material to create cells that store data bits. The cells that store the data bits are embedded in a network of transistors, which are connected to the memory device\'s input and output. The transistors act like switches, allowing data to be read and written to the memory device.

When the data is written to the memory device, the transistors open in order to deposit the data bits. When the data is read, the transistors close in order to retrieve the data bits. The device is capable of operating at low voltages, allowing it to be used in a variety of applications. The device has low power requirements, making it ideal for use in portable applications and is also capable of providing high data integrity and reliability.

The 70V9079L7PF8 is an advanced memory device that offers exceptional performance and power efficiency for digital storage and retrieval applications. It utilizes an advanced technology called Floating Gate MOSFET, which utilizes microscopic layers of material to create cells that store data bits. The device is capable of operating at low voltages, allowing it to be used in a variety of applications. The device is also capable of providing high data integrity and reliability. The device is designed to work effectively with a wide range of operating systems and applications.

The specific data is subject to PDF, and the above content is for reference

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