70V9279L12PRFI

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Dual Port, Synchronous
Memory Size:	512Kb (32K x 16)
Write Cycle Time - Word, Page:	--
Access Time:	12ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	128-LQFP
Supplier Device Package:	128-TQFP (14x20)

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Memory

The 70V9279L12PRFI (hereafter referred to as the "memory") is a type of dynamic random access memory (DRAM) chip developed by Toshiba Corporation. As DRAM, it stores information by using a dynamic refresh mechanism to maintain stored data. It\'s a type of semiconductor memory that stores data in an array of capacitors coupled with MOS transistors. The capacitors store charge for a short period of time, and must be periodically refreshed by re-applying a voltage to their corresponding transistors. The memory is well-suited for a variety of applications, such as portable computers, game consoles, digital cameras and other consumer electronics. It is also used in industrial and medical applications where low power consumption is required. The memory is particularly popular in automotive applications, due to its low power consumption and reliability.The working principle of the memory is as follows. The capacitor\'s charge is monitored and refreshed by a voltage regulator on the chip. When the voltage supplied to the chip decreases, the memory can no longer store charge. This is where the refresh procedure kicks in. The voltage regulator on the chip automatically detects a decrease in voltage and triggers a refresh operation. The voltage regulator then applies a higher voltage to the capacitors, allowing the memory to store charge again. This process repeats while the memory is in use.In addition to its refreshing mechanism, the memory also uses an error correction system to detect and correct errors during data storage and retrieval. This system uses a technique called EDC (Error Detection and Correction) to detect and, if necessary, correct errors that occur during data transmission or storage. By using EDC, the memory is able to store data reliably and reduce the risk of data corruption.As a DRAM chip, the memory offers several advantages. One is its superior performance; its refreshing cycle ensures that data is stored reliably and does not need to be continually updated. Additionally, its error detection and correction system ensure that data is correct and error-free. Finally, its low power consumption and small form factor make it an ideal choice for applications that require a large amount of memory but have limited power and space resources. Overall, the 70V9279L12PRFI is an ideal choice for a variety of applications that require reliable, low-power and low-cost memory. Its refreshing cycle keeps stored data reliably and its EDC system prevents data corruption. Additionally, its small form factor and low power consumption make it well-suited for applications with limited energy and space requirements.

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