71024S15YG8 Allicdata Electronics
Allicdata Part #:

800-1414-2-ND

Manufacturer Part#:

71024S15YG8

Price: $ 1.29
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 1M PARALLEL 32SOJ
More Detail: SRAM - Asynchronous Memory IC 1Mb (128K x 8) Paral...
DataSheet: 71024S15YG8 datasheet71024S15YG8 Datasheet/PDF
Quantity: 1000
1000 +: $ 1.16461
Stock 1000Can Ship Immediately
$ 1.29
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 32-SOJ
Base Part Number: IDT71024
Description

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Memory - 71024S15YG8 Application Field and Working Principles

As the advancement in computing technologies, the demand for high performance memory modules such as 71024S15YG8 is increasing tremendously. This memory module has been designed specifically to provide reliable performance, cost-effectiveness and low power consumption. It packs 1GB of capacity and is suitable for small form factor devices such as laptops and ultrabooks.

One of the biggest advantages of 71024S15YG8, when compared to its competitors, is its power efficiency. Its power rating is just 1.35V which is lower than other high capacity modules available in the market. At the same time, it offers 20 times more capacity than traditional memory chips which makes it an attractive option for users who want to take advantage of the increased storage and higher performance of the module.

The major application field of 71024S15YG8 is in providing reliable and durable data storage. This memory module offers advanced error correction capabilities, along with support for advanced signal processing technology. It is capable of providing sustained high-speed data transfer rates of up to 800 MBps, which is more than enough to meet the needs of a busy data center environment.

The working mechanism of 71024S15YG8 starts with the controller. It consists of a control logic that sends signals to the memory modules. The signals indicate the read and write operations that are to be performed. The controller then routes the data signals to the memory chips through the address bus and the data bus. This ensures that the correct data is read and written in the correct locations on the memory chips. In addition to this, the controller also ensures that the write operations are completed before the read operations begin.

The memory modules themselves consist of individual memory chips and an array of circuits that store the data. The data is stored in each memory chip in the form of bits that are logically arranged in a certain order. The data stored in each memory chip is then transferred to the memory controller when requested by the processor. This is done through a sequence of electrical signals sent over the address and data buses.

When the data is to be written to the memory chips, the address and data buses are used to send data from the processor to the memory controller. The memory controller then interprets the signals and uses them to determine the locations of the bits in the individual memory chips. Once the data is stored in the correct spots, the controller sends a signal to the processor to confirm the successful completion of the write operation.

In order to read data from the memory chips, the memory controller does the reverse process. It interprets the signals sent from the processor and determines the location of the data in the individual memory chips. Once found, the data is transferred over the address and data buses from the memory chips to the processor. The controller then sends another signal to the processor to indicate a successful read operation has been completed.

71024S15YG8 is one of the most popular memory modules available in the market today. Its superior power efficiency, along with its high storage capacity, makes it an ideal choice for heavy-duty data storage applications. Furthermore, its advanced error correction capability and efficient use of electrical signals make it a reliable choice for users who need a durable and efficient memory.

The specific data is subject to PDF, and the above content is for reference

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