71024S15YGI8 Allicdata Electronics
Allicdata Part #:

800-1415-2-ND

Manufacturer Part#:

71024S15YGI8

Price: $ 1.58
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 1M PARALLEL 32SOJ
More Detail: SRAM - Asynchronous Memory IC 1Mb (128K x 8) Paral...
DataSheet: 71024S15YGI8 datasheet71024S15YGI8 Datasheet/PDF
Quantity: 1000
1000 +: $ 1.43109
Stock 1000Can Ship Immediately
$ 1.58
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 32-SOJ
Base Part Number: IDT71024
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The memory sector of the computer industry is highly competitive and is undergoing constant changes to keep up with the demand for faster and more efficient computer systems. 71024S15YGI8 is one of the latest technologies in the field of memory, and it promises to revolutionize the industry by delivering significantly higher speeds and greater efficiency. In order to understand the application field and working principle of 71024S15YGI8, it is important to start by looking at its main features.

71024S15YGI8 is a type of static random access memory (SRAM) and is able to store data without having to be continuously powered. Compared to dynamic random access memory (DRAM), SRAM provides significantly faster data access times and is suitable for applications requiring rapid access to large amounts of data. 71024S15YGI8 utilizes a novel technology known as “detection circuit switching” to store data at higher than normal speeds. This is done by utilizing a number of detection circuits that are used to detect whether the data stored in the memory chip has been updated or not.

When the detection circuits detect a change in the data stored in the chip, they will switch the data so that it is being stored in the fastest area of the memory chip. This system helps to reduce access times by eliminating the need for the chip to scan through the entire area of the chip to locate the updated data. This provides significantly faster data access times than traditional SRAM memory, which can become slow when dealing with large amounts of data.

The 71024S15YGI8 is ideal for use in high-demand applications, such as gaming and graphical applications, where faster data access times are essential. It is also suitable for applications where energy efficiency is important, as the chip is able to retain data without the need for continuous power. The power draw of the 71024S15YGI8 is much lower than that of dynamic random access memory chips, making it ideal for use in battery-powered devices.

The 71024S15YGI8 is also well suited for use in data centers and other applications where fast, reliable data storage is required. The chip’s high-capacity storage and low power draw make it an ideal choice for these applications, as it is able to provide a high level of performance without drawing too much power.

In conclusion, the 71024S15YGI8 is a revolutionary new type of static random access memory chip that is able to provide faster data access times, greater energy efficiency, and more reliable data storage. Its unique detection circuit switching technology makes it an ideal choice for applications requiring fast data access, such as gaming and graphical applications, and for data centers and other applications requiring large amounts of data storage.

The specific data is subject to PDF, and the above content is for reference

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