71124S20YGI Allicdata Electronics
Allicdata Part #:

71124S20YGI-ND

Manufacturer Part#:

71124S20YGI

Price: $ 1.46
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 1M PARALLEL 32SOJ
More Detail: SRAM - Asynchronous Memory IC 1Mb (128K x 8) Paral...
DataSheet: 71124S20YGI datasheet71124S20YGI Datasheet/PDF
Quantity: 1000
345 +: $ 1.32961
Stock 1000Can Ship Immediately
$ 1.46
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 32-SOJ
Base Part Number: IDT71124
Description

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71124S20YGI is a type of memory device, commonly used in various applications due to its high performance and reliability. This memory device is based on Dual In-Line Memory Module (DIMM) technology, which allows the device to be configured and installed quickly and easily. The memory device is typically used in memory applications such as industrial systems, military and aerospace systems, communications infrastructure, and computer systems.

71124S20YGI offers significant advantages over other types of memory components, such as higher data density, improved signal integrity, and lower power consumption. It also offers impressive scalability and performance, which make it suitable for a wide range of advanced applications.

The core of 71124S20YGI is its dual in-line memory module (DIMM) technology. This technology involves the use of two memory controllers, or “banks”, which are connected to each other through a narrow signal bus. Each bank contains two memory banks, and the two banks can operate independently. The memory modules themselves contain several individual memory chips, which are interconnected through control gates on the DIMM. The control gates allow the memory chips to be written to, read from, and updated simultaneously.

The 71124S20YGI memory device also includes an on-die error correction code (ECC) feature, which helps to ensure data accuracy and reliable operation. The ECC feature is based on the cyclic redundancy check (CRC) algorithm, which can detect and correct errors in data transmission. The ECC feature also includes a parity protection mode, which helps to detect data errors even when the error area exceeds the amount of memory within a single chip.

In addition to its advanced ECC feature, the 71124S20YGI has several other features which make it suitable for advanced applications. It has an auto-read capability, which allows the device to access memory at high speeds. It also supports queued burst data access, meaning that data can be transferred at higher speeds by queuing multiple read operations. Finally, the device supports multiple burst data-transfer modes, allowing it to simultaneously access different memory areas.

The 71124S20YGI is a versatile and reliable memory component, and is suitable for a wide range of applications. Its advanced features make it suitable for demanding applications such as industrial systems, military and aerospace systems, communications infrastructure, and computer systems. Its high performance and reliability make it an ideal choice for any memory application.

The specific data is subject to PDF, and the above content is for reference

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