7132LA100C Allicdata Electronics
Allicdata Part #:

7132LA100C-ND

Manufacturer Part#:

7132LA100C

Price: $ 34.85
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 16K PARALLEL SB48
More Detail: SRAM - Dual Port, Asynchronous Memory IC 16Kb (2K ...
DataSheet: 7132LA100C datasheet7132LA100C Datasheet/PDF
Quantity: 1000
40 +: $ 31.67770
Stock 1000Can Ship Immediately
$ 34.85
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 16Kb (2K x 8)
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 48-DIP (0.600", 15.24mm)
Supplier Device Package: 48-SIDE BRAZED
Base Part Number: IDT7132
Description

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Memory is an essential aspect of modern technology and everyday life. It has become a key factor in the development of advanced digital products and services with increasingly more sophisticated functions and capabilities. The 7132LA100C is a type of memory chip used in various applications and devices. This article will discuss the application fields of the 7132LA100C as well as its working principle.

The 7132LA100C is a memory chip which utilizes a fast page mode device. It is a 32-Kbit dynamic random access memory (DRAM) device, also known as a static random access memory (SRAM). It is capable of both reading and writing data. This chip is used in a variety of applications, including automotive, industrial and medical systems. It has been developed to meet the needs of a wide range of customers from all sectors. In addition, it can be used in diverse contexts. The 7132LA100C is especially suitable for applications that require a low-power and low-cost solution.

The 7132LA100C employs a fast page mode to retrieve data quickly and perform operations without delay. In this mode, the DRAM device can begin pre-charging the next address while accessing the current address. This pre-charging reduces the time wasted waiting for the memory to refresh between each address access, thereby significantly improving the overall speed.

The 7132LA100C is also designed with a high-speed DRAM operation protocol, which enables a high data transfer rate at up to 200 Mbit/s. This is especially useful in high-speed read/write operations required in some applications. In addition, the device features a programmable temporal access latency, allowing for the optimization of access times when needed.

The 7132LA100C is also equipped with error detection and correction features. These features help to ensure that data stored in memories is accurate, reliable and consistent. This chip contains a built-in hardware detection and correction mechanism for single-bit errors in a 15-bit ECC code. This means that it can detect and correct these errors automatically, thus preventing data from being corrupted.

Last but not least, the 7132LA100C is also designed with a number of advanced design techniques to reduce power consumption. These techniques include a cloaking system, which reduces power consumption when Vcc is below a certain level, and a deep sleep mode, which shuts down the chip when the power is shut off.

In summary, the 7132LA100C is a DRAM-based memory chip which is suitable for a variety of applications, including automotive, industrial and medical systems. Its fast page mode allows for quick data retrieval and operation. In addition, its high-speed data transfer rate, error detection/correction mechanisms and advanced design techniques help to ensure reliable data storage and operation with low power consumption.

The specific data is subject to PDF, and the above content is for reference

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