7140LA55L48B

Series:	--
Packaging:	Tube
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Dual Port, Asynchronous
Memory Size:	8Kb (1K x 8)
Write Cycle Time - Word, Page:	55ns
Access Time:	55ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	-55°C ~ 125°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-LCC
Supplier Device Package:	48-LCC (14.22x14.22)
Base Part Number:	IDT7140

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Memory: 7140LA55L48B Application Field and Working Principle

7140LA55L48B is a kind of memory, involving multiple models and sizes for varying applications such as mobile phones and industrial control systems. Its dense packing and quick operation are the advantages of 7140LA55L48B, enabling it to satisfy applications with varying requirements, such as large capacity, fast operation speed and wide variety.

Overview of 7140LA55L48B Memory

7140LA55L48B is an integrated memory solution provided by Nanya, a leading semiconductor company. It is characterized by low power operation, high-density storage, ultra-low-voltage design, self-refreshing mechanism, and other features. In terms of storage capacity, each 7140LA55L48B\'s chip stores 4 Megabytes of data. In terms of operating environment, 7140LA55L48B chips are capable of operating in wide temperature ranges with voltage levels between 1.0V ~ 5.5V.

7140LA55L48B Application Fields

7140LA55L48B memory can be applied in many fields, for example mobile phones, notebook computers and industrial control systems.1. Mobile Phones: 7140LA55L48B is a perfect choice for mobile phones. It can handle large amounts of data, making it suitable for range of mobile apps, such as mobile gaming and video streaming. 2. Notebook Computers: 7140LA55L48B memory also makes laptops or notebooks more efficient. Its high capacity and fast operation speed greatly improves the product performance than conventional technologies, such as memories based on traditional DDR2 modulus. 3. Industrial Control Systems: As for industrial control systems, 7140LA55L48B memory provides a dense packing solution for widely used industrial applications. It offers wide range of varieties, makes the product more efficient and cost-effective, thus improving the yield rate for such products.

Working Principle of 7140LA55L48B Memory

The working principle of 7140LA55L48B is based on the synchronous dynamic random access memory (SDRAM). The main idea behind SDRAM is the synchronization of input commands with system clock cycles. 7140LA55L48B uses 8 multiplexed address lines (MA) and 8 data lines (MD) connected to the SDRAM chip. When the SDRAM chip receives the read command and set the right MA and MD selection signals, the data stored in the memory cell will be output in the same cycle. Once the process is done, the system can read all the required data in one cycle. 7140LA55L48B also employs self-refreshing mechanism. This mechanism automatically refreshes the entire memory, which helps to sustain steady memory performance for extended period of time. With this feature implemented, heat generated from the SDRAM chip is significantly reduced, thus extending its life.

Conclusion

7140LA55L48B memory can be applied in a wide range of applications, from industrial to consumer electronics. Its strong capabilities and features make it a good fit from mobile phones, notebook computers and industrial control systems, offering a suitable and efficient memory solution. Furthermore, with the help of its advanced synchronous dynamic random access memory (SDRAM) and self-refreshing mechanism, 7140LA55L48B can perform even in the most demanding environment.

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