7142LA55P

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Dual Port, Asynchronous
Memory Size:	16Kb (2K x 8)
Write Cycle Time - Word, Page:	55ns
Access Time:	55ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Through Hole
Package / Case:	48-DIP (0.600", 15.24mm)
Supplier Device Package:	48-PDIP
Base Part Number:	IDT7142

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7142LA55P Application Field and Working PrincipleMemory is an important device in modern electronic systems, which stores and reads data, instructions and information. Memory devices have greatly improved computing speed and have greatly increased the computing power of computers and mobile devices. The 7142LA55P memory device is a special kind of random access memory (RAM), which allows data to be written, loaded or saved quickly and easily. It is designed to store digital data, such as instructions and information, and is extremely fast at retrieving these data and instructions. The 7142LA55P particular design enables it to remain reliable during the application and ensure high speed access to the stored data. The 7142LA55P is widely used in many types of applications, such as computer and digital equipment, medical devices, gaming devices and automotive applications. It is also used in industrial robots to store and control their movements and actions. The 7142LA55P also finds application in communication systems, allowing data to be quickly shared between multiple devices and allowing signals to be transmitted more quickly. The 7142LA55P works by transferring data between its internal memory cells, known as chips. It consists of a single chip and a number of capacitors, each holding a certain amount of charge. Each capacitor is responsible for storing a single bit of data. When a signal is sent to the chip, the capacitor charges up, and depending on the signal, either a 0 or a 1 is stored in the memory. By repeating the process multiple times, a given number of bits can be stored in the memory.In order to quickly access the data, the 7142LA55P uses a technique called dynamic random access memory, or DRAM. This technique reduces the time that it takes to access a given piece of data by storing several pieces of data in the same memory cell, called a page. Whenever a signal is transmitted to the memory, the stored data is moved to a higher voltage level, and the stored bit is read out. This allows the data to be read out much more quickly than if it were stored in a single memory cell.The 7142LA55P is also capable of providing error correction, meaning that if a single bit is corrupted, the memory device will be able to read the correct data from the other bits stored on the same page. This strength makes the 7142LA55P very suitable for applications where data integrity is essential, such as automotive and industrial applications. In conclusion, the 7142LA55P is a special type of memory device, designed to provide fast access to data and reliable error correction. It is used in a wide variety of applications, from computer and digital equipment to medical devices and industrial robots.

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