71421SA35JI

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Dual Port, Asynchronous
Memory Size:	16Kb (2K x 8)
Write Cycle Time - Word, Page:	35ns
Access Time:	35ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	52-LCC (J-Lead)
Supplier Device Package:	52-PLCC (19.13x19.13)

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Introduction
The 71421SA35JI is a type of memory, which stands for Synchronous SRAM and is used in many applications. It is, what is known as, a synchronous static random access memory, or SSRAM, that is capable of high performance and fast access times. It is specifically designed to handle large amounts of data quickly and efficiently, making it ideal for use in embedded systems and real-time applications such as data logging and streaming. It is also used frequently in the technology sector, especially in computing, telecommunications and networking.

Application field
The 71421SA35JI is used in many applications where high performance and fast access times are needed. It is often used in mobile devices, such as smartphones and tablets, to reduce operation power consumption and improve system performance. It is also used in high-end gaming consoles and other gaming applications, as well as in servers, media processing devices and embedded systems. Additionally, the 71421SA35JI can be used in robotics and robotics-related applications, military and aerospace applications, automotive electronics and automation systems, as well as in industrial applications such as machine vision and image processing.

Working Principle
The 71421SA35JI is based on the synchronous SRAM architecture, which is a combination of static RAM (SRAM) and synchronous logic. Synchronous logic ensures the correct operation of the device by creating synchronization between the system clock, data inputs and outputs. It is this concept that allows the 71421SA35JI to offer high performance and exceptionally fast access times. Furthermore, the device also includes a microprocessor-style bus that allows for easier system integration and eliminates the need for extra signal and clock lines.

The device is composed of a main array block and a control block. The main array block consists of memory cells arranged into multiple columns and rows. These cells are accessed via the address bus, which is sent from the processor. The cells can store data bits by either setting them to a ‘1’ or ‘0’. When the data bits are set, they can be retrieved either directly (synchronously) or indirectly (asynchronously). Once a read or write operation is complete, the data is then transferred onto or off of the device via the bidirectional data bus.

The control block is the part of the device responsible for the address decoding and the controlling of read and write operations. The control block decodes the address bus and determines which cell is being accessed. It also generates various control signals, such as timing signals, read/write signals and data requests, that are used to control the operation of the device. The control block also has the ability to perform self-test operations and other functions such as refresh cycles and power-saving modes.

Conclusion
The 71421SA35JI is a type of synchronous SRAM that is used in a wide variety of applications due to its high performance and fast access times. It has a main array block with memory cells that can be accessed via an address bus from a processor. Additionally, it has a control block which coordinates the read and write operations, as well as other operations such as refresh cycles and power-saving modes. The 71421SA35JI is an invaluable storage type, which is suitable for many applications, such as mobile devices, high-end gaming consoles, servers, media processing devices, embedded systems, robotics and robotics-related applications, military and aerospace applications, automotive electronics, automation systems, and industrial applications.

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