71421SA35J Allicdata Electronics

71421SA35J Integrated Circuits (ICs)

Allicdata Part #:

71421SA35J-ND

Manufacturer Part#:

71421SA35J

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 16K PARALLEL 52PLCC
More Detail: SRAM - Dual Port, Asynchronous Memory IC 16Kb (2K ...
DataSheet: 71421SA35J datasheet71421SA35J Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 16Kb (2K x 8)
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-LCC (J-Lead)
Supplier Device Package: 52-PLCC (19.13x19.13)
Base Part Number: IDT71421
Description

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Memory is an essential element of modern computing, helping modern processors to rapidly access data, store information and rapidly transfer data to different devices. The 71421SA35J Memory is an important part of modern computing, aiding the successful application of today\'s technology.

The 71421SA35J Memory belongs to a category of dynamic random access memory (DRAM) devices, but with an added dynamic spin transfer torque RAM (STT-RAM). This type of memory is particularly useful in modern computing, due to its large memory capacity and stability in increasingly data-rich environments. The STT-RAM technology used in the 71421SA35J Memory allows the physical device to store data even when the power is not actively supplied. This is referred to as non-volatile memory, and results in increased data stability and faster data read and write speeds. The 71421SA35J Memory also has a low power consumption compared to other types of memory, meaning it can be used in mobile or laptop environments.

The STT-RAM technology used in the 71421SA35J Memory operates on a unique principle. This involves using electron spins to encode information in a way that the information can be retrieved even when power is not actively supplied. The bits are represented by electron spins that can switch between parallel and anti-parallel electrical fields. When a parallel field is applied, the spin is reversed to represent “0”, while a reversed field kept in the anti-parallel state is used to represent “1”. A read operation is executed when the spins are reversed, which is always done in the anti-parallel state; this allows the information to be retrieved.

The 71421SA35J Memory is ideal for use in high performance applications, such as data centers, scientific computing, and gaming. Its large capacity and stable retention of data make it ideal for long-term usage. Its low power consumption also makes it suitable for use in mobile or laptop environments, allowing data to be retrieved or written quickly. Its versatile nature also makes it suitable for use in embedded systems, allowing for a cost-efficient use of resources.

The 71421SA35J Memory is an invaluable tool for dealing with large amounts of data and efficiently storing memory. Its non-volatile nature, low power consumption and versatile nature, make it a valuable addition to any computing system. Its use of advanced STT-RAM technology guarantees the stability of data and overall performance.

The specific data is subject to PDF, and the above content is for reference

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